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Titlebook: Recent Advances in Science and Technology of Materials; Volume 1 Adli Bishay (Director) Book 1974 Plenum Press, New York 1974 X-ray.crystal

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發(fā)表于 2025-3-21 17:02:08 | 只看該作者 |倒序?yàn)g覽 |閱讀模式
書目名稱Recent Advances in Science and Technology of Materials
副標(biāo)題Volume 1
編輯Adli Bishay (Director)
視頻videohttp://file.papertrans.cn/823/822986/822986.mp4
圖書封面Titlebook: Recent Advances in Science and Technology of Materials; Volume 1 Adli Bishay (Director) Book 1974 Plenum Press, New York 1974 X-ray.crystal
描述If an ion in a crystal is replaced by an impurity ion with a different charge, compensation for the charge difference must be accomplished. This is usually done by an intrinsic defect, i. e. a lattice vacancy or interstitial host ion, in such a way to balance the excess or deficit of charge. The introduction of cation vacan- cies along with divalent cation impurities in alkali halides is a familiar example. If these crystals are carefully annealed, nearly all of the compensating defects migrate to the impurity ions to form impurity-defect complexes. It is the behavior of these complexes that are the principal concern in this paper. Almost invariably such complexes are dipolar in character, and when subjected to an electric or mechanical stress field, they will tend to realign to an orienta- tion of lower energy provided the thermal activation is sufficiently great. If the complex consists of an impurity-vacancy couple, re- orientation may occur either by the vacancy moving around the impu- rity or by an exchange of positions of the partners. In general the activation energy for these two distinct reorientation paths is different. If the complex consists of an impurity-interstitial
出版日期Book 1974
關(guān)鍵詞X-ray; crystal; defects; deformation; energy; glass; iron; material; materials; metals; semiconductors; stress
版次1
doihttps://doi.org/10.1007/978-1-4684-3021-9
isbn_softcover978-1-4684-3023-3
isbn_ebook978-1-4684-3021-9
copyrightPlenum Press, New York 1974
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https://doi.org/10.1007/978-1-4684-3021-9X-ray; crystal; defects; deformation; energy; glass; iron; material; materials; metals; semiconductors; stress
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The Capture of Electrons by Negatively Charged Impurity Atoms in N-Type Germanium the way in which the electron loses energy in its transition from the conduction band to a captured state. We have studied the dependence of capture rate on the external electric field at law temperature (20°K) for n-Ge containing gold centres as impurities.
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發(fā)表于 2025-3-22 14:32:48 | 只看該作者
Effect of Heat Treatment on Electrical Properties and Structure of As-Te-Ge Chalcogenide Thin Films. This material was found to exhibit negative resistance with a memory and can be converted from high to low resistance state thermally by heating to a transition temperature or electrically by passing a transition current. The activation energy for conduction was found to be 0.36 and 0.3 eV in the high and low resistance states respectively.
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Electrical Properties of Quenched SnO2 Films on Glass Substrateso be dependent upon the film forming compounds the film growth rate and temperature the hydrolytic reaction intrinsic and thermal stress. The thermal stress is responsible for the observed difference in conductivity on glass substrates with different α-values.
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