| 書(shū)目名稱 | Rare-Earth Doped III-Nitrides for Optoelectronic and Spintronic Applications |
| 編輯 | Kevin O’Donnell,Volkmar Dierolf |
| 視頻video | http://file.papertrans.cn/822/821238/821238.mp4 |
| 概述 | Provides a snapshot of the field at a critical point in its development.Summarises recent progress in the science and technology of rare-earth doped nitrides.First book on Rare-earth doped III-Nitride |
| 叢書(shū)名稱 | Topics in Applied Physics |
| 圖書(shū)封面 |  |
| 描述 | This book provides a snapshot of recent progress in the field of rare-earth-doped group III-nitride semiconductors, especially GaN, but extending to AlN and the alloys AlGaN, AlInN and InGaN. This material class is currently enjoying an upsurge in interest due to its ideal suitability for both optoelectronic and spintronic applications. The text first introduces the reader to the historical background and the major theoretical challenges presented when 4f electron systems are embedded in a semiconductor matrix. It details the preparation of samples for experimental study, either by in-situ growth or ion implantation/annealing, and describes their microscopic structural characterisation. Optical spectroscopy is a dominant theme, complicated by site multiplicity, whether in homogeneous hosts or in heterostructures such as quantum dots, and enlivened by the abiding fascination of the energy transfer mechanism between the host material and the lumophore. Finally, the rapid progress towards prospective optoelectronic and spintronic devices is presented along with several examples. |
| 出版日期 | Book 2010 |
| 關(guān)鍵詞 | development; material; non-destructive testing; quantum dot; semiconductor; spintronics |
| 版次 | 1 |
| doi | https://doi.org/10.1007/978-90-481-2877-8 |
| isbn_softcover | 978-94-017-8472-6 |
| isbn_ebook | 978-90-481-2877-8Series ISSN 0303-4216 Series E-ISSN 1437-0859 |
| issn_series | 0303-4216 |
| copyright | Springer Science+Business Media B.V. 2010 |
|Archiver|手機(jī)版|小黑屋|
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