Titlebook: Radiation Effects in Advanced Semiconductor Materials and Devices; Cor Claeys,Eddy Simoen Book 2002 Springer-Verlag Berlin Heidelberg 2002

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Book 2002lso be immensely useful for nuclear and space engineers and even process engineers. A background knowledge of semiconductor and device physics is assumed, but the basic concepts are all briefly summarized. Finally the book outlines the shortcomings of present experimental and modeling techniques and gives an outlook on future developments.

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Displacement Damage in Group IV Semiconductor Materials,ntified. Usually, increasing the annealing temperature leads to a further clustering or aggregation of the point defects into larger, more stable defects. Small clusters may, however, also directly form in the ‘cluster damage’ region induced by high energy neutrons or ions, where a high density of primary V-I pairs is created.

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Radiation Damage in GaAs,y through the use of band gap engineering by modifying the III-V alloy or its composition. In this way, the complete range from the near infrared (InGaP) to the blue wavelength range (GaN) can be covered.

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