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Titlebook: Quantum Transport in Semiconductors; David K. Ferry,Carlo Jacoboni Book 1992 Springer Science+Business Media New York 1992 Diode.modeling.

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發(fā)表于 2025-3-21 18:17:22 | 只看該作者 |倒序?yàn)g覽 |閱讀模式
書目名稱Quantum Transport in Semiconductors
編輯David K. Ferry,Carlo Jacoboni
視頻videohttp://file.papertrans.cn/782/781531/781531.mp4
叢書名稱Physics of Solids and Liquids
圖書封面Titlebook: Quantum Transport in Semiconductors;  David K. Ferry,Carlo Jacoboni Book 1992 Springer Science+Business Media New York 1992 Diode.modeling.
描述The majority of the chapters in this volume represent a series of lectures. that were given at a workshop on quantum transport in ultrasmall electron devices, held at San Miniato, Italy, in March 1987. These have, of course, been extended and updated during the period that has elapsed since the workshop was held, and have been supplemented with additional chapters devoted to the tunneling process in semiconductor quantum-well structures. The aim of this work is to review and present the current understanding in nonequilibrium quantum transport appropriate to semiconductors. Gen- erally, the field of interest can be categorized as that appropriate to inhomogeneous transport in strong applied fields. These fields are most likely to be strongly varying in both space and time. Most of the literature on quantum transport in semiconductors (or in metallic systems, for that matter) is restricted to the equilibrium approach, in which spectral densities are maintained as semiclassical energy- conserving delta functions, or perhaps incorporating some form of collision broadening through a Lorentzian shape, and the distribution functions are kept in the equilibrium Fermi-Dirac form. The most
出版日期Book 1992
關(guān)鍵詞Diode; modeling; semiconductor; tunneling
版次1
doihttps://doi.org/10.1007/978-1-4899-2359-2
isbn_softcover978-0-306-43853-0
isbn_ebook978-1-4899-2359-2
copyrightSpringer Science+Business Media New York 1992
The information of publication is updating

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Numerical Techniques for Quantum Transport and Their Inclusion in Device Modeling,an easily refer to the recent literature. The following sections address and introduce the physical problems related to each line and identify the numerical techniques used for their theoretical description. Finally, some concluding remarks are given.
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Tunneling Times in Quantum Mechanical Tunneling,ng to the lifetime of the metastable state is the average length of time a gas particle spends in the vessel. When a gas particle finally is able to escape, the much shorter time it has spent in the thin tube is the analogue of the traversal time.
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Path Integral Method: Use of Feynman Path Integrals in Quantum Transport Theory,th well-defined probability distributions whose changes in space and time are governed by integral-differential equations involving complicated scattering rates. While sophisticated methods are often necessary to effect solutions, there is seldom any question as to the correctness of the form of the
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Quantum Transport in Solids: The Density Matrix,bmicron regions, many new and interesting questions have emerged. concerning the solid state dynamics and quantum transport of carriers in semiconductors subjected to rapidly varying, spatially inhomogeneous electric fields, and non-steady-state temporal conditions.
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