Titlebook: Quantum Dots: Fundamentals, Applications, and Frontiers; Proceedings of the N Bruce A. Joyce,Pantelis C. Kelires,Dimitri D. Vved Conference

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G. Hadjisavvas,Ph. Sonnet,P. C. Kelires Die Zustandsr?ume dieser Prozesse legten die m?glichen Verm?gensentwicklungen fest. Die n?here Charakterisierung m?glicher Verm?gensentwicklungen erfolgte dabei mit der Wahrscheinlichkeitsverteilung des Verm?gens sowie den Ruinwahrscheinlichkeiten. Dabei wurden stets die Aussagen über den Verm?gens

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The Mechanism of the Stranski-Krastanov Transitionr is determined for the complete range of deposited In concentrations using atomistic simulations. The segregation-mediated driving force is considered to be important, also, for all other epitaxial systems which comprise chemically-similar but substantially misfitting materials and which exhibit the Stranski—Krastanov transition.

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Formation of Two-Dimensional Si/Ge Nanostructures Observed by STMtinguish between the elements Si and Ge. A difference in apparent height is measured in STM images for Si and Ge, respectively. Additionally, different kinds of 2D Si/Ge nanostructures, such as alternating Si and Ge nanorings having a width of 5–10 nm, were grown.

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X-Ray Scattering Methods for the Study of Epitaxial Self-Assembled Quantum Dotsnd suppression of the scattered intensity close to the absorption edge of one of the chemical elements in the island. We show that for Ge dome-shaped islands the different techniques give similar results.

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