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Titlebook: Physics of Wurtzite Nitrides and Oxides; Passport to Devices Bernard Gil Book 2014 Springer International Publishing Switzerland 2014 Ahete

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書目名稱Physics of Wurtzite Nitrides and Oxides
副標題Passport to Devices
編輯Bernard Gil
視頻videohttp://file.papertrans.cn/748/747265/747265.mp4
概述Gives a survey of the current state-of-the-art of research on Wurtzite Nitride and Oxide Semiconductors.Includes upcoming advanced applications.Written in a tutorial style.Includes supplementary mater
叢書名稱Springer Series in Materials Science
圖書封面Titlebook: Physics of Wurtzite Nitrides and Oxides; Passport to Devices Bernard Gil Book 2014 Springer International Publishing Switzerland 2014 Ahete
描述This book gives a survey of the current state of the art of a special class of nitrides semiconductors, Wurtzite Nitride and Oxide Semiconductors. It includes properties, growth and applications. Research in the area of nitrides semiconductors is still booming although some basic materials sciences issues were solved already about 20 years ago. With the advent of modern technologies and the successful growth of nitride substrates, these materials currently experience a second birth. Advanced new applications like light-emitters, including UV operating LEDs, normally on and normally off high frequency operating transistors are expected. With progress in clean room technology, advanced photonic and quantum optic applications are envisioned in a close future. This area of research is fascinating for researchers and students in materials science, electrical engineering, chemistry, electronics, physics and biophysics. This book aims to be the ad-hoc instrument to this active field of research.
出版日期Book 2014
關鍵詞Aheterostructures of Wurtzitic Epilayers; Blue-ray Technology; Growth and Structural Characterization
版次1
doihttps://doi.org/10.1007/978-3-319-06805-3
isbn_softcover978-3-319-38083-4
isbn_ebook978-3-319-06805-3Series ISSN 0933-033X Series E-ISSN 2196-2812
issn_series 0933-033X
copyrightSpringer International Publishing Switzerland 2014
The information of publication is updating

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