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Titlebook: Physics and Chemistry of Te and HgTe-based Ternary Semiconductor Melts; Ching-Hua Su Book 2021 This is a U.S. government work and not unde

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書目名稱Physics and Chemistry of Te and HgTe-based Ternary Semiconductor Melts
編輯Ching-Hua Su
視頻videohttp://file.papertrans.cn/748/747060/747060.mp4
概述Provides accurate information on thermophysical properties of semiconductor melts for the quantitative descriptions of the process of crystal growth from melt.Shows analysis of changes in thermophysic
圖書封面Titlebook: Physics and Chemistry of Te and HgTe-based Ternary Semiconductor Melts;  Ching-Hua Su Book 2021 This is a U.S. government work and not unde
描述.This book reviews the experimental measurements of density, thermal conductivity, viscosity, and electrical conductivity on the binary, pseudo-binary melts of the most advanced IR-detector material systems of HgCdTe and HgZnTe as well as the theoretical analyses of these results. The time-dependent measurements on the relaxation behavior of the thermophysical properties during rapid cooling of the melts were also performed to elucidate the characteristics of the structural fluctuation and transition of the melts..The author shows his research results which extend understanding of the solidification process in order to interpret and improve the experimental results of crystal growth and enhances the fundamental knowledge of heterophase fluctuations phenomena in the melts so as to improve the melt growth processes of all the semiconductor systems..An in-depth study on the thermophysical properties and their time-dependent structural dynamic processes taking place in the vicinity of the solid-liquid phase transition of the narrow homogeneity range HgTe-based ternary semiconductors as well as the structural analysis of the alloy homogenization process in the melt is needed to understa
出版日期Book 2021
關(guān)鍵詞Thermodynamic formulation; Thermal conductivity measurements; Te liquid; Metal-Semiconductor transition
版次1
doihttps://doi.org/10.1007/978-3-030-75586-7
isbn_softcover978-3-030-75588-1
isbn_ebook978-3-030-75586-7
copyrightThis is a U.S. government work and not under copyright protection in the U.S.; foreign copyright pro
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