| 書目名稱 | Phase Change Memory | | 副標(biāo)題 | From Devices to Syst | | 編輯 | Moinuddin K. Qureshi,Sudhanva Gurumurthi,Bipin Raj | | 視頻video | http://file.papertrans.cn/746/745748/745748.mp4 | | 叢書名稱 | Synthesis Lectures on Computer Architecture | | 圖書封面 |  | | 描述 | As conventional memory technologies such as DRAM and Flash run into scaling challenges, architects and system designers are forced to look at alternative technologies for building future computer systems. This synthesis lecture begins by listing the requirements for a next generation memory technology and briefly surveys the landscape of novel non-volatile memories. Among these, Phase Change Memory (PCM) is emerging as a leading contender, and the authors discuss the material, device, and circuit advances underlying this exciting technology. The lecture then describes architectural solutions to enable PCM for main memories. Finally, the authors explore the impact of such byte-addressable non-volatile memories on future storage and system designs. Table of Contents: Next Generation Memory Technologies / Architecting PCM for Main Memories / Tolerating Slow Writes in PCM / Wear Leveling for Durability / Wear Leveling Under Adversarial Settings / Error Resilience in Phase Change Memories /Storage and System Design With Emerging Non-Volatile Memories | | 出版日期 | Book 2012 | | 版次 | 1 | | doi | https://doi.org/10.1007/978-3-031-01735-3 | | isbn_softcover | 978-3-031-00607-4 | | isbn_ebook | 978-3-031-01735-3Series ISSN 1935-3235 Series E-ISSN 1935-3243 | | issn_series | 1935-3235 | | copyright | Springer Nature Switzerland AG 2012 |
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