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Titlebook: Ordering at Surfaces and Interfaces; Proceedings of the T Akio Yoshimori,Teruya Shinjo,Hisatsune Watanabe Conference proceedings 1992 Sprin

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發(fā)表于 2025-3-21 17:02:38 | 只看該作者 |倒序瀏覽 |閱讀模式
書目名稱Ordering at Surfaces and Interfaces
副標題Proceedings of the T
編輯Akio Yoshimori,Teruya Shinjo,Hisatsune Watanabe
視頻videohttp://file.papertrans.cn/704/703662/703662.mp4
叢書名稱Springer Series in Materials Science
圖書封面Titlebook: Ordering at Surfaces and Interfaces; Proceedings of the T Akio Yoshimori,Teruya Shinjo,Hisatsune Watanabe Conference proceedings 1992 Sprin
描述This volume contains the proceedings of the third in a series of biennial NEC Symposia on Fundamental Approaches to New Material Phases sponsored by the NEC Corporation, Tokyo, Japan. The symposium was held from October 7 to 11, 1990, at the Hakone Kanko H9tel in Hakone. About 40 invited participants stayed together, became involved in intense discussions, and freely exchanged ideas both in and out of the conference room, which faced Mt. Fuji, the beautiful lake Ashinoko, and the quiet landscape in the old crater. The title of this volume, Ordering at Surfaces and Interfaces, which was also the title of the third symposium, describes the aim of the symposium: to discuss ordering properties and their underlying mechanisms at surfaces and interfaces. The topics treated include the reconstruction of surfaces of semiconductors and metals, atomic and magnetic ordering at interfaces, theoretical tools to study or- dering mechanisms at surfaces and interfaces, ordering in adsorbate-surface sys- tems, such as alkali-adsorbed silicon surfaces, electric current effects on semicon- ductor surfaces and many related STM (scanning tunneling microscopy) results.
出版日期Conference proceedings 1992
關(guān)鍵詞Atom; Migration; Oberfl?chenbehandlung; Sorption; adsorption; electron spectroscopy; electronic structure;
版次1
doihttps://doi.org/10.1007/978-3-642-84482-9
isbn_softcover978-3-642-84484-3
isbn_ebook978-3-642-84482-9Series ISSN 0933-033X Series E-ISSN 2196-2812
issn_series 0933-033X
copyrightSpringer-Verlag Berlin Heidelberg 1992
The information of publication is updating

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Scanning Tunneling Microscopy of Stepped Si(111) Surfacess also observed on Si(111) surface, originating from the electromigration effect. On cleaved Si(111) surfaces, a flight of [112] directed steps was found, whose appearance is also explained by the simple bond model for double Si atoms.
板凳
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Energetics of Surface Atomic Processesions, crystal growth, adsorption layer superstructure formation, and why an atomic ordering at the surface is energetically favored. Mechanisms of various atomic processes can also be clarified by these studies.
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Conference proceedings 1992he NEC Corporation, Tokyo, Japan. The symposium was held from October 7 to 11, 1990, at the Hakone Kanko H9tel in Hakone. About 40 invited participants stayed together, became involved in intense discussions, and freely exchanged ideas both in and out of the conference room, which faced Mt. Fuji, th
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Ion and X-Ray Scattering Studies of Surface Disorder. For the detection of disorder induced by surface melting the technique of medium-energy ion scattering can be used to advantage. We will discuss recent ion scattering studies of the thermal disordering of the Al(110) and Ge(111) surfaces.
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Properties of Graphite and Monolayer Graphite Studied by Electron Energy Loss Spectroscopy and Scanncurves of the monolayer graphite are very different from those in the bulk; some vibrational modes soften strongly. Scanning tunneling microscopy has shown that the electronic structure of the monolayer graphite is modified largely with the periodicity of the substrate.
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Surface Order and Disorder Studied by Scanning Tunneling Microscopyetals on semiconductor and metal surfaces. These results illustrate the local ordering of surface reconstructions and the effect of substrate surface reconstruction on nucleation and growth. The STM provides information about these surfaces that is largely inaccessible to other analytical techniques.
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