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Titlebook: Optical and Electronic Process of Nano-Matters; Motoichi Ohtsu Book 2001 Springer Science+Business Media Dordrecht 2001 Evanescent wave.Op

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樓主: dabble
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發(fā)表于 2025-3-25 06:53:45 | 只看該作者
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發(fā)表于 2025-3-25 12:48:11 | 只看該作者
J. Bae,K. Mizunof 2, and can operate at higher frequencies since the critical path can be kept short. The required speed of the subsequent stages is lowered by the prescaler division number, but also the smallest frequency step has increased by that number. For a constant frequency resolution, the reference frequen
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發(fā)表于 2025-3-25 18:58:38 | 只看該作者
a very brief summary of the classification and diagnostic characters of each genus before going on to a consideration of diseases caused by the various species. This brief summary is in small type, so that it can be readily skipped by readers uninterested in the technical details. Perhaps I am the
25#
發(fā)表于 2025-3-25 20:59:41 | 只看該作者
Electronic and Electromagnetic Properties in Nanometer Scales,ditions, such electromagnetic considerations correspond to of circuit design problems which are usually independent of the microscopic construction of each element. In nanometer scales, however, the construction and function of devices which determine the electronic and electromagnetic properties mi
26#
發(fā)表于 2025-3-26 03:59:47 | 只看該作者
Electron Transport in Semiconductor Quantum Dots,typical capacitance of the island. The one-by-one change in the number of electrons on the island gives rise to oscillations in the tunneling conductance (Coulomb oscillations) when the gate voltage is swept. These oscillations are usually periodic when the number of electrons is “l(fā)arge”. However, i
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發(fā)表于 2025-3-26 07:55:59 | 只看該作者
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發(fā)表于 2025-3-26 19:15:19 | 只看該作者
Correlation between Interface States and Structures Deduced from Atomic-Scale Surface Roughness in ale surface roughness of ultrathin oxide on oxide film thickness was measured. This enabled the effect of the interface structure on the atomic-scale surface roughness to be clarified on an atomic-scale. The effect of the interface structure on the interface electronic states and the valence band st
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