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Titlebook: Optical Properties of Semiconductors; N. G. Basov Book 1976 Consultants Bureau, New York 1976 semiconductor

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發(fā)表于 2025-3-21 17:37:18 | 只看該作者 |倒序?yàn)g覽 |閱讀模式
書目名稱Optical Properties of Semiconductors
編輯N. G. Basov
視頻videohttp://file.papertrans.cn/703/702655/702655.mp4
叢書名稱The Lebedev Physics Institute Series
圖書封面Titlebook: Optical Properties of Semiconductors;  N. G. Basov Book 1976 Consultants Bureau, New York 1976 semiconductor
出版日期Book 1976
關(guān)鍵詞semiconductor
版次1
doihttps://doi.org/10.1007/978-1-4615-7548-1
isbn_softcover978-1-4615-7550-4
isbn_ebook978-1-4615-7548-1
copyrightConsultants Bureau, New York 1976
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發(fā)表于 2025-3-21 20:29:40 | 只看該作者
Measurement Methode photoluminescence spectra can be used to obtain most reliable information on the physics of recombination processes because optical excitation does not change significantly the crystal lattice structure.
板凳
發(fā)表于 2025-3-22 02:50:08 | 只看該作者
地板
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發(fā)表于 2025-3-22 12:18:20 | 只看該作者
Magnetically Tuned Stimulated Raman Emission from Indium Antimonidecomparing various types of Raman scattering of light in semiconductors we shall concentrate on the Raman scattering involving optical plasmons and electron transitions between Landau levels in semiconductors [110].
6#
發(fā)表于 2025-3-22 15:34:52 | 只看該作者
Resonance Luminescence of Condensed Exciton Phase in Germaniumthreshold, which depended on the excitation rate, The integrated intensity of this infrared luminescence (. > 80 .) was very high so that we could study in detail its properties, particularly the spectral composition and the dependences on the temperature and excitation rate [64, 65].
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發(fā)表于 2025-3-23 02:00:08 | 只看該作者
Energy Spectra and Collective Properties of Excitons in Semiconductorses of electrons and holes only strengthen the inequalities of Eq.(1). It follows that the energy spectrum of excitons can be calculated using the effective mass approximation in which an exciton can be treated as a two-body system.
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發(fā)表于 2025-3-23 07:39:32 | 只看該作者
Methods Used in Far-Infrared Investigations of Excitons in SemiconductorsAn experimental investigation of the energy spectrum and collective properties of excitons was carried out by the present author using mainly the far-infrared absorption and luminescence spectra of excited germanium.
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