Titlebook: Optical Constants of Crystalline and Amorphous Semiconductors; Numerical Data and G Sadao Adachi Book 1999 Springer Science+Business Media

TOXIC

Sadao Adachigruppe führt dazu, da? belastetes Bodenmaterial oral aufgenommen werden kann. Die Spielplatzerlasse in Nordrhein-Westfalen (Kramer et al. 1990) und Bayern (AG Umwelthygiene 1994) gehen bei der humantoxikologischen Bewertung von einer Bodeningestion von 1 g/Tag aus. Zu bedenken ist jedoch, da? auf se

aerobic

協(xié)議

Silicon (Si) it in abundance); however, this element is usually not found free, but mainly in its oxides and silicates. The Czochralski method is commonly used to produce single crystals of Si used for solid-state devices. Crystalline Si has a metallic luster and grayish color, and transmits more than 95% of al

CYT

共同生活

Gray Tin (α-Sn)into white, or ?-Sn, the ordinary form of the metal (tetragonal structure). Early experiments on α-Sn were performed on lumpy polycrystalline samples obtained by transforming ?-Sn at temperatures below 13°C. In 1958 Ewald and Tufte [1] succeeded in preparing a-Sn single crystals from a saturated mer

deface

Cubic Silicon Carbide (3C-SiC)s types of SiC differ one from another only by the order in which successive planes of Si (or C) atoms are stacked along the . axis; one polytype is cubic (3C) while the remainder, including two of the more frequently occurring forms, 6H and 15R, possess uniaxial symmetry. Note that in the polytype

小畫像

裂隙

Carbon-Incorporated Alloys (SI,C,, SI,GE,C,, etc.)ircuit technology [1,2]. For a variety of technical reasons, in particular to adjust the strain in the het-eroepitaxial layers, it is desirable to adjust the stain in the group-IV materials and form alloys (., Si.C., and Si.Ge.C.). For the Si-Ge system, the bond-length mismatch is only 4%, whereas i

Aura231

Cubic Boron Nitride (,-BN) properties like extreme hardness, high melting point, high thermal conductivity, large band-gap energy, low dielectric constant, and high chemical stability. If the problems of crystal growth are solved, it will become an important material for many industrial applications.

形容詞

Aluminum Nitride (AIN)(～∣2?5∣×10. cm/V at 300 K) (see Ref. [1]). AIN has also excellent insulator and passivation properties, low dispersion of permittivity, and low dielectric loss. These make it useful for numerous device applications (see, ., Ref. [2]).