Titlebook: Numerical Simulation of Oscillatory Convection in Low-Pr Fluids; A GAMM Workshop Bernard Roux Book 1990 Friedr. Vieweg & Sohn Verlagsgesell

懲罰

Introductionng semiconductor crystals. Such oscillations have been shown to occur in enclosures as well as in open cavities, and in real crystallization processes as well as in model experiments (without growth). After the famous model experiment by Hurle et al. [1] with liquid gallium, demonstrating critical c

FRAUD

Benchmark Definition constant temperatures: T. and T.. The cavity has a rigid bottom wall, and two types of conditions are considered for its upper surface: (i) rigid (denoted R-R) and (ii) shear-stress free (denoted R-F). Experiments [1] and [2] establish that the buoyancy-driven flow which ensues as soon as T. ≠ T. b

伙伴

A Comparison of Velocity-Vorticity and Stream Function-Vorticity Formulations for Pr=0e of a rigid-rigid cavity with . = 0. A uniform mesh of 41 × 161 was used in both formulations. The velocity-vorticity method predicts more accurate velocity components but at a higher computational cost.

BOON

Buoyancy-driven oscillatory flows in shallow cavities filled with low-Prandtl number fluidson to the benchmark case, attention was focused on the determination of the onset of oscillatory regimes for rigid-rigid (denoted R-R) and for rigid-free (R-F) horizontal walls. Selected samples of results are given for the supercritical regimes. An hysteresis regime is found in the R-R cases, at Pr

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PALMY

myopia

Low Prandtl Number Convection in a Shallow Cavityllow cavity with different end temperatures and conducting horizontal walls. The Navier-Stokes equations were written in the stream-function vorticity formulation and the governing equations were solved in conservative form.

NOVA

佛刊

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