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Titlebook: Numerical Methods and Applications; 7th International Co Ivan Dimov,Stefka Dimova,Natalia Kolkovska Conference proceedings 2011 Springer Be

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41#
發(fā)表于 2025-3-28 15:57:21 | 只看該作者
Stochastic Algorithms in Linear Algebra - beyond the Markov Chains and von Neumann - Ulam Schemecussed here in a broader context. In particular, I present new randomized solvers for large systems of linear equations, randomized singular value (SVD) decomposition for large matrices and their use for solving inverse problems, and stochastic simulation of random fields. Stochastic projection meth
42#
發(fā)表于 2025-3-28 21:52:05 | 只看該作者
SM Stability for Time-Dependent Problemsmes such a scheme that is optimal in terms of certain additional criteria. In this study, we use a simple boundary value problem for a one-dimensional parabolic equation to discuss the selection of an approximation with respect to time. We consider the pure diffusion equation, the pure convective tr
43#
發(fā)表于 2025-3-29 01:29:39 | 只看該作者
Advanced Monte Carlo Techniques in the Simulation of CMOS Devices and Circuitsfect the design of the next generations of integrated circuits and systems. The progressive scaling of CMOS transistors to achieve faster devices and higher circuit density has fuelled the phenomenal success of the semiconductor industry captured by Moores famous law [1]. Silicon technology has ente
44#
發(fā)表于 2025-3-29 05:26:16 | 只看該作者
45#
發(fā)表于 2025-3-29 09:44:44 | 只看該作者
46#
發(fā)表于 2025-3-29 15:18:55 | 只看該作者
The ,-adic Diaphony as a Tool to Study Pseudo-randomness of Netsences. The study of pseudo-random properties of uniformly distributed nets is extremely important for quasi-Monte Carlo integration. It is known that the error of the quasi-Monte Carlo integration depends on the distribution of the points of the net. On the other hand, the .-adic diaphony gives info
47#
發(fā)表于 2025-3-29 17:29:28 | 只看該作者
48#
發(fā)表于 2025-3-29 23:27:07 | 只看該作者
Modeling of the SET and RESET Process in Bipolar Resistive Oxide-Based Memory Using Monte Carlo Simu electron occupation probabilities obtained is in agreement with previous work. In particular, a low occupation region is formed near the cathode. Our simulations of the temperature dependence of the electron occupation probability near the anode and the cathode demonstrate a high robustness of the
49#
發(fā)表于 2025-3-30 03:15:39 | 只看該作者
50#
發(fā)表于 2025-3-30 04:56:05 | 只看該作者
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