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Titlebook: Noise in Semiconductor Devices; Modeling and Simulat Fabrizio Bonani,Giovanni Ghione Book 2001 Springer-Verlag Berlin Heidelberg 2001 Semic

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書目名稱Noise in Semiconductor Devices
副標(biāo)題Modeling and Simulat
編輯Fabrizio Bonani,Giovanni Ghione
視頻videohttp://file.papertrans.cn/667/666794/666794.mp4
概述Related to further miniaturization of semiconductor devices the problem of noise in them becomes more and more important.This book is the first one dealing with this subject in a complex way
叢書名稱Springer Series in Advanced Microelectronics
圖書封面Titlebook: Noise in Semiconductor Devices; Modeling and Simulat Fabrizio Bonani,Giovanni Ghione Book 2001 Springer-Verlag Berlin Heidelberg 2001 Semic
描述The design and optimization of electronic systems often requires appraisal an of the electrical noise generated by active devices, and, at a technological level, the ability to properly design active elements in order to minimize, when possible, their noise. Examples of critical applications are, of course, receiver front-ends in RF and optoelectronic transmission systems, but also front-end stages in sensors and, in a completely different context, nonlinear circuits such as oscillators, mixers, and frequency multipliers. The rapid de- velopment of silicon RF applications has recently fostered the interest toward low-noise silicon devices for the lower microwave band, such as low-noise MOS transistors; at the same time, the RF and microwave ranges are be- coming increasingly important in fast optical communication systems. Thus, high-frequency noise modeling and simulation of both silicon and compound- semiconductor based bipolar and field-effect transistors can be considered as an important and timely topic. This does not exclude, of course, low- frequency noise, which is relevant also in the RF and microwave ranges when- ever it is up-converted within a nonlinear system, either a
出版日期Book 2001
關(guān)鍵詞Semiconductor; device numerical simultation; integrated circuit; noise in linear circuits; noise in nonl
版次1
doihttps://doi.org/10.1007/978-3-662-04530-5
isbn_softcover978-3-642-08586-4
isbn_ebook978-3-662-04530-5Series ISSN 1437-0387 Series E-ISSN 2197-6643
issn_series 1437-0387
copyrightSpringer-Verlag Berlin Heidelberg 2001
The information of publication is updating

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Physics-Based Small-Signal Noise Simulation,listic conditions, the solution of such models requires the use of numerical techniques. The numerical treatment of PDE systems, and therefore of physics-based device models, includes two logical steps: the model ., and the . of the discretized model. Such issues are reviewed in a number of referenc
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Noise in Large-Signal Operation,of a superposition of ., often named . as well. Such signals are large enough to require a complete, time-varying device analysis, meaning that the basic assumption of small-signal operation, i.e. that the time-dependent signals are a linear perturbation of the DC operating point, is no longer valid
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Fabrizio Bonani,Giovanni Ghionenext step, a detailed description of solid waste—silica gel contaminated with aluminum and fluorine ions—is presented. This waste is usually landfilled, which may lead to serious environmental issues. The application of silica gel waste is limited because it contains ~10?wt% of F. ions; however, the
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Fabrizio Bonani,Giovanni Ghionet immune responses in the body on demand and offers effective ways to restore the immune status and treat uncontrollable obstinate diseases such as cancer, autoimmune diseases, severe infection and immuno-insufficiency/deficiency caused by tissue damages, abnormality, primary defect and aging. Artif
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