書目名稱 | Noise in Semiconductor Devices | 副標(biāo)題 | Modeling and Simulat | 編輯 | Fabrizio Bonani,Giovanni Ghione | 視頻video | http://file.papertrans.cn/667/666794/666794.mp4 | 概述 | Related to further miniaturization of semiconductor devices the problem of noise in them becomes more and more important.This book is the first one dealing with this subject in a complex way | 叢書名稱 | Springer Series in Advanced Microelectronics | 圖書封面 |  | 描述 | The design and optimization of electronic systems often requires appraisal an of the electrical noise generated by active devices, and, at a technological level, the ability to properly design active elements in order to minimize, when possible, their noise. Examples of critical applications are, of course, receiver front-ends in RF and optoelectronic transmission systems, but also front-end stages in sensors and, in a completely different context, nonlinear circuits such as oscillators, mixers, and frequency multipliers. The rapid de- velopment of silicon RF applications has recently fostered the interest toward low-noise silicon devices for the lower microwave band, such as low-noise MOS transistors; at the same time, the RF and microwave ranges are be- coming increasingly important in fast optical communication systems. Thus, high-frequency noise modeling and simulation of both silicon and compound- semiconductor based bipolar and field-effect transistors can be considered as an important and timely topic. This does not exclude, of course, low- frequency noise, which is relevant also in the RF and microwave ranges when- ever it is up-converted within a nonlinear system, either a | 出版日期 | Book 2001 | 關(guān)鍵詞 | Semiconductor; device numerical simultation; integrated circuit; noise in linear circuits; noise in nonl | 版次 | 1 | doi | https://doi.org/10.1007/978-3-662-04530-5 | isbn_softcover | 978-3-642-08586-4 | isbn_ebook | 978-3-662-04530-5Series ISSN 1437-0387 Series E-ISSN 2197-6643 | issn_series | 1437-0387 | copyright | Springer-Verlag Berlin Heidelberg 2001 |
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