Titlebook: Noise in Nanoscale Semiconductor Devices; Tibor Grasser Book 2020 Springer Nature Switzerland AG 2020 Random Telegraph Signals in Semicond

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Advanced Electrical Characterization of Single Oxide Defects Utilizing Noise Signals, main focus is put on the analysis of noise signals, especially on the analysis of the so-called random telegraph noise (RTN), which is caused by single microscopic defects in the MOS transistor. In detail, RTN signals evolve as discrete changes of the current between two distinct levels when static

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Measurement and Simulation Methods for Assessing SRAM Reliability Against Random Telegraph Noise,AM) reliability are described. RTN refers to random transition between two conduction states of a transistor with time, associated with trapping/de-trapping of a single electron or hole. It is a reliability concern for advanced integrated circuits using extremely small transistors, since their elect

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Random Telegraph Noise Under Switching Operation,test chips. They were fabricated in three different processes of 65 nm bulk, 65 nm FDSOI, and 40 nm bulk. Measurements are performed for ROs of different topology, gate width, and stage number under different supply voltage, substrate bias, and temperature. Measurement results reveal valuable insigh

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,Low-Frequency Noise in III–V, Ge, and 2D Transistors,Low-frequency noise characterization can be used as alternate probes to quantitatively analyze performance, variability, and reliability of such devices with novel materials and architectures. In this chapter, low-frequency noise characteristics of MOSFETs with novel channel materials are presented

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Detection and Characterization of Single Defects in MOSFETs,miconductor surface in MOSFETs. Recently, a unique and systematic characterization of . single MOS interface defects was carried out using the CP method. Based on the experimental results, it is shown in this chapter that two energy levels participate in electron capture/emission processes in a sing

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,Random Telegraph Noise Nano-spectroscopy in High-κ Dielectrics Using Scanning Probe Microscopy Techg random telegraph noise (RTN) signatures, considering HfO. high-κ dielectric as the material of interest. The chapter also provides an overview on the challenges associated with the existing probe station-based device-level RTN spectroscopy and the potential for the conductive atomic force microsco

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RTN and Its Intrinsic Interaction with Statistical Variability Sources in Advanced Nano-Scale Devicuctor devices is well documented. In particular its effect is exasperated in advanced nano-scale devices. In this book chapter, we navigate through some of the important effects of RTN in advanced MOS devices in detail. The amplitude of RTN fluctuation (in terms of current and threshold voltage) ass

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