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Titlebook: Noise Contamination in Nanoscale VLSI Circuits; Selahattin Sayil Textbook 2022 The Editor(s) (if applicable) and The Author(s), under excl

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書目名稱Noise Contamination in Nanoscale VLSI Circuits
編輯Selahattin Sayil
視頻videohttp://file.papertrans.cn/667/666770/666770.mp4
概述Offers comprehensive, textbook coverage of all major noise mechanisms affecting nanometer VLSI circuits.Covers power supply noise in on-chip power and ground distribution networks and its impact on ci
叢書名稱Synthesis Lectures on Digital Circuits & Systems
圖書封面Titlebook: Noise Contamination in Nanoscale VLSI Circuits;  Selahattin Sayil Textbook 2022 The Editor(s) (if applicable) and The Author(s), under excl
描述This textbook provides readers with a comprehensive introduction to various noise sources that significantly reduce performance and reliability in nanometer-scale integrated?circuits. The?author covers different types of noise, such as crosstalk noise caused by signal switching of adjacent wires, power supply noise or IR voltage drop in the power line due to simultaneous buffer / gate switching events, substrate coupling noise, radiation-induced transients, thermally induced noise and noise due to process and environmental?Coverages?also includes the relationship between some of these noise sources, as well as compound effects, and modeling and mitigation of noise mechanisms..
出版日期Textbook 2022
關鍵詞CMOS Design & Reliability textbook; VLSI Design for Reliability textbook; VLSI Noise textbook; Intercon
版次1
doihttps://doi.org/10.1007/978-3-031-12751-9
isbn_softcover978-3-031-12753-3
isbn_ebook978-3-031-12751-9Series ISSN 1932-3166 Series E-ISSN 1932-3174
issn_series 1932-3166
copyrightThe Editor(s) (if applicable) and The Author(s), under exclusive license to Springer Nature Switzerl
The information of publication is updating

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Thermal Noise, also emerged as a major design concern for high-performance integrated circuits for the future technology nodes as it significantly affects the performance of a chip. The increased temperature affects both interconnect resistance and driving strength of buffers. Since the driving strengths of the c
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