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Titlebook: Next Generation Spin Torque Memories; Brajesh Kumar‘Kaushik,Shivam Verma,Sanjay Prajapat Book 2017 The Author(s) 2017 Spin Transfer Torque

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發(fā)表于 2025-3-21 16:34:50 | 只看該作者 |倒序?yàn)g覽 |閱讀模式
書目名稱Next Generation Spin Torque Memories
編輯Brajesh Kumar‘Kaushik,Shivam Verma,Sanjay Prajapat
視頻videohttp://file.papertrans.cn/667/666234/666234.mp4
概述Demonstrates nonvolatile computing architecture using spin transfer torque-magnetoresistive random access memory (STT-MRAMs) and comparison with conventional architecture.Includes emerging topics such
叢書名稱SpringerBriefs in Applied Sciences and Technology
圖書封面Titlebook: Next Generation Spin Torque Memories;  Brajesh Kumar‘Kaushik,Shivam Verma,Sanjay Prajapat Book 2017 The Author(s) 2017 Spin Transfer Torque
描述.This book offers detailed insights into spin transfer torque (STT) based devices, circuits and memories. Starting with the basic concepts and device physics, it then addresses advanced STT applications and discusses the outlook for this cutting-edge technology. It also describes the architectures, performance parameters, fabrication, and the prospects of STT based devices. Further, moving from the device to the system perspective it presents a non-volatile computing architecture composed of STT based magneto-resistive and all-spin logic devices and demonstrates that efficient STT based magneto-resistive and all-spin logic devices can turn the dream of instant on/off non-volatile computing into reality..
出版日期Book 2017
關(guān)鍵詞Spin Transfer Torque; Magnetic Tunnel Junction; STT-MRAM; All Spin Logic; Non-volatile Computing Archite
版次1
doihttps://doi.org/10.1007/978-981-10-2720-8
isbn_softcover978-981-10-2719-2
isbn_ebook978-981-10-2720-8Series ISSN 2191-530X Series E-ISSN 2191-5318
issn_series 2191-530X
copyrightThe Author(s) 2017
The information of publication is updating

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Brajesh Kumar Kaushik,Shivam Verma,Anant Aravind Kulkarni,Sanjay Prajapatiworking on surface plasmons in metal films.Contains importan.This significantly extended second edition?addresses the important physical phenomenon of?Surface Plasmon Resonance (SPR) or Surface Plasmon Polaritons (SPP) in thin metal films, a phenomenon which is?exploited in the design of a large var
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Next Generation 3-D Spin Transfer Torque Magneto-resistive Random Access Memories,ation density. These exclusive features of STT MRAMs are rapidly gaining attention of memory designers. They are strong contenders for futuristic embedded memory applications. However, further reduction in write power dissipation and cell size is essential to employ STT MRAMs for embedded applicatio
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Spin Orbit Torque MRAM,power dissipation and unlimited endurance. In addition, it offers CMOS compatible architectures with high-speed read and write operations. During the initial phase of the development, researchers envisaged the greater potential of the STT based magnetic random access memory (MRAM) to become an alter
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