Titlebook: New Developments in Semiconductor Physics; Proceedings of the I Ferenc Beleznay,Gy?rgy Ferenczi,János Giber Conference proceedings 1980 Spr

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書目名稱New Developments in Semiconductor Physics影響因子(影響力)




書目名稱New Developments in Semiconductor Physics影響因子(影響力)學(xué)科排名




書目名稱New Developments in Semiconductor Physics網(wǎng)絡(luò)公開度




書目名稱New Developments in Semiconductor Physics網(wǎng)絡(luò)公開度學(xué)科排名




書目名稱New Developments in Semiconductor Physics被引頻次




書目名稱New Developments in Semiconductor Physics被引頻次學(xué)科排名




書目名稱New Developments in Semiconductor Physics年度引用




書目名稱New Developments in Semiconductor Physics年度引用學(xué)科排名




書目名稱New Developments in Semiconductor Physics讀者反饋




書目名稱New Developments in Semiconductor Physics讀者反饋學(xué)科排名

防御

Stress dependence of quantum limit hall effect and transverse magnetoresistance in n-InSb,increased by an uniaxial stress of some kbar. While the zero-stress results were described by a quantum transport theory including the effect of the nonparabolicity of the conduction band on ionized impurity scattering consistently, this theory fails to reproduce the stress dependence of the conductivity tensor.

Vertebra

利用

Optically detected magnetic resonance studies of semiconductors,ported and details of deep acceptor centres associated with vacancies in II–VI compounds are given. A recent investigation of oxygen in GaP confirms the existence of the two electron trap and studies of amorphous silicon show that the ODMR technique can be used to study deep centres in both crystalline and amorphous semiconductors.

BLAND

Analysis of defect states by transient capacitance methods in proton bombarded gallium arsenide at σ. = 9.10. cm.) which anneals between 200 K and 300 K. We have also applied the new method DLOS (Deep Level Optical Spectroscopy) to the determination of the optical capture cross-section σ .(hη) of E. to determine the lattice relaxation effect of this centre.

背心

被詛咒的人

反話

Herbivorous

B. C. Cavenett die beobachtete Merkmalsvarianz zwischen den Individuen weitgehend auf Differenzen beruht, die genetischer Natur sind, kann durch Züchtung diese Varianz ausgenützt werden, das hei?t, wird es m?glich, auf Grund bestimmter Züchtungsverfahren mehrheitlich diejenigen Individuen zur Zucht auszuw?hlen, d

Solace