Titlebook: Neutron-Transmutation-Doped Silicon; Jens Guldberg (Conference Chairman) Book 1981 Plenum Press, New York 1981 Thyristor.Wafer.control.def

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書目名稱Neutron-Transmutation-Doped Silicon影響因子(影響力)




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Defect Production During Neutron Doping of Simeasurements using EPR, optical absorption, Raman scattering and DLTS which have been used to observe a number of defects which have been produced in Si by room temperature neutron irradiation. The numbers of displacements observed by these techniques will be compared to a simple Kinchin-Pease cascade model..

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Optical Studies of Lattice Damage in Neutron-Transmutation-Doped Siliconntervals from 150 to 900°C.. All samples were irradiated in a reactor in- core position with a thermal-to-fast (≥1 MeV) neutron ratio of ? 5, so that the lattice damage introduced by thermal neutron absorption and (n, γ) recoils was negligible compared to that introduced by fast neutron collisions with Si atoms.

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Large Scale Production of NTD Silicon in the United Statese played by the starting material. Analysis of the possible sources of inaccuracies is made..An outline of a zone refining process for producing only NTD product is compared to a conventional one with a discussion of advantages of the two. Trends in the manufacture and usage of NTD float zone silicon are discussed

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Impurity Interactions with Structural Defects in Irradiated Siliconxes. It will be shown that irradiation and annealing procedures can lead to non-equilibrium defects involving these njnpurities. We shall also report on recent small angle neutron scattering SANS measurements which allow the sizes of clusters and the absolute numbers of defects involved to be estimated.

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Factors Affecting Phosphorus Production Rate in NTD Siliconh irradiation and annealing, and incomplete annealing. It is important for both the silicon manufacturer and the reactor service engineer to understand these factors if the accuracy of doping inherent in the NTD process is to be realized.

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