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Titlebook: Neutron Transmutation Doping of Semiconductor Materials; Robert D. Larrabee Book 1984 Plenum Press, New York 1984 Europe.Germanium.Thyrist

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11#
發(fā)表于 2025-3-23 10:07:27 | 只看該作者
An Automatic Controlled, Heavy Water Cooled Facility for Irradiation of Silicon Crystals in the DR 3n enlarged concurrently with the growing demand for netron transmutation doped crystals..This report describes a recently developed facility for the irradiation of 4 inches silicon crystals. The irradiation rig is placed in one of the vertical experimental tubes in the heavy water moderator of the r
12#
發(fā)表于 2025-3-23 15:40:00 | 只看該作者
Irradiation of Single Silicon Crystals with Diameters in the 3-to 5-Inch Range in French Reactorseter ingots have been constructed at several locations. These facilities use neutronic absorption screens to produce a uniform axial distribution of thermal neutron flux. This feature, plus the systematic calibration of the irradiation equipment have contributed to the attainment of the target resis
13#
發(fā)表于 2025-3-23 19:00:45 | 只看該作者
14#
發(fā)表于 2025-3-24 02:10:51 | 只看該作者
15#
發(fā)表于 2025-3-24 06:20:52 | 只看該作者
Experiences with the Norwegian Research Reactor Jeep II in Neutron Transmutation Dopingry radionuclide production irradiation facilities are used, with some modifications of the loading equipment. The neutron flux range for this type of irradiation is 0.5?1.4 × 10. n/cm. sec, and the maximum diameter of silicon ingots that can be handled is 78 mm..The availbale effective volume for si
16#
發(fā)表于 2025-3-24 08:01:53 | 只看該作者
17#
發(fā)表于 2025-3-24 13:56:27 | 只看該作者
18#
發(fā)表于 2025-3-24 17:33:16 | 只看該作者
Process Induced Recombination Centres in Neutron Transmutation Doped Silicon and their Influence on ticular large diameter high resistivity NTD Silicon has permitted the design of higher voltage and higher current thyristors for High-Voltage Direct-Current applications. In this paper we report on a study of the effects of lifetime degradation in NTD Silicon during device processing and its influen
19#
發(fā)表于 2025-3-24 23:04:00 | 只看該作者
20#
發(fā)表于 2025-3-25 01:58:11 | 只看該作者
Experience with Neutron Transmutation Doped Silicon in the Production of High Power Thyristorsnt lifetime distributions as measured before processing into thyristors using a light-spot method and liquid rectifying contacts. The material annealed at 1,200°C shows lifetime variations which reflect the spiral patterns arising during the growth of the crystal. These lifetime variations were not
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