找回密碼
 To register

QQ登錄

只需一步,快速開始

掃一掃,訪問(wèn)微社區(qū)

打印 上一主題 下一主題

Titlebook: Handbuch der speziellen pathologischen Anatomie und Histologie; G. Biondi,N. Gellerstedt,W. Scholz Book 1956 Springer-Verlag Berlin Heidel

[復(fù)制鏈接]
樓主: Animosity
11#
發(fā)表于 2025-3-23 11:05:03 | 只看該作者
Gerd Petersography materials, catalysts and photonic materials (reviewed by Iler 1979). Silica may be produced at high temperature, via aqueous processing or by largely non-aqueous routes such as the low-temperature sol-gel process (reviewed in Brinker and Scherrer 1990; Hench and West 1990).Whatever the event
12#
發(fā)表于 2025-3-23 17:10:58 | 只看該作者
H. Jacobduction of electronic materials. There is a multitude of physical phenomena in the sublimation growth process. Only a partial modeling of the whole process can be made even by the most ambitious researcher. The main objective is to reach an accurate understanding of heat and mass transfer. It could
13#
發(fā)表于 2025-3-23 21:47:04 | 只看該作者
14#
發(fā)表于 2025-3-23 23:17:09 | 只看該作者
W. Scholz,H. Hageraterial growth and homoepitaxial growth. Homoepitaxial growth of SiC by vapor phase epitaxy (VPE) was started in the mid 1980th due to unsatisfactory results in epilayer quality by growth techniques such as liquid phase epitaxy and close space sublimation. The first VPE-reactors for SiC were former
15#
發(fā)表于 2025-3-24 04:15:25 | 只看該作者
16#
發(fā)表于 2025-3-24 07:25:04 | 只看該作者
B. Ostertageteorites, but in very small amounts and is not in a useable state as an industrial material. For industrial require- ments, large amounts of silicon carbide must be synthesized by solid state reactions at high temperatures. Silicon carbide has been used for grinding and as an abrasive material sinc
17#
發(fā)表于 2025-3-24 11:25:06 | 只看該作者
18#
發(fā)表于 2025-3-24 16:27:43 | 只看該作者
19#
發(fā)表于 2025-3-24 22:17:28 | 只看該作者
20#
發(fā)表于 2025-3-25 01:06:40 | 只看該作者
Gerd Petersrovides a comprehensive collection of SiC technologies inforSilicon Carbide Microsystems for Harsh Environments reviews state-of-the-art Silicon Carbide (SiC) technologies that, when combined, create microsystems capable of surviving in harsh environments, technological readiness of the system compo
 關(guān)于派博傳思  派博傳思旗下網(wǎng)站  友情鏈接
派博傳思介紹 公司地理位置 論文服務(wù)流程 影響因子官網(wǎng) 吾愛論文網(wǎng) 大講堂 北京大學(xué) Oxford Uni. Harvard Uni.
發(fā)展歷史沿革 期刊點(diǎn)評(píng) 投稿經(jīng)驗(yàn)總結(jié) SCIENCEGARD IMPACTFACTOR 派博系數(shù) 清華大學(xué) Yale Uni. Stanford Uni.
QQ|Archiver|手機(jī)版|小黑屋| 派博傳思國(guó)際 ( 京公網(wǎng)安備110108008328) GMT+8, 2025-10-6 00:03
Copyright © 2001-2015 派博傳思   京公網(wǎng)安備110108008328 版權(quán)所有 All rights reserved
快速回復(fù) 返回頂部 返回列表
西和县| 东海县| 同心县| 报价| 图片| 克什克腾旗| 邵东县| 瓦房店市| 孟津县| 新源县| 栾城县| 墨江| 凤台县| 天台县| 桦川县| 巴彦淖尔市| 双牌县| 周宁县| 桐城市| 卓尼县| 枞阳县| 镇雄县| 得荣县| 杨浦区| 玉林市| 桦南县| 开阳县| 启东市| 蓬安县| 巨鹿县| 灵山县| 静宁县| 抚远县| 鄱阳县| 包头市| 海林市| 汝州市| 灵山县| 武定县| 定结县| 嘉峪关市|