Titlebook: Negative Differential Resistance and Instabilities in 2-D Semiconductors; N. Balkan,B. K. Ridley,A. J. Vickers Book 1993 Springer Science+

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Electronic Transport in Semiconductors at High Energies: Effects of the Energy Band Structure,efore are dominated by bandstructure effects. To describe these effects quantitatively it is necessary to go beyond the usual inclusion of non-parabolicity and to use a full bandstructure as calculated, for example, from the empirical pseudopotential method. Current Monte Carlo simulations of these

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Application of a New Multi-Scale Approach to Transport in a GaAs/AlAs Heterojunction Structure,f semiconductor devices, the presence of interfaces has an increasingly significant impact on device performance. Consequently there is a need for an accurate description of devices that includes transport over heterojunctions. The question then becomes how to simulate a small region of quantum tran

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Hot Electron Instabilities in QWs: Acoustoelectric Effect and Two-Stream Plasma Instability,ic field, is in excess of the velocity of the acoustic modes of the system: acoustic phonons and acoustic plasmons, the latter being a feature of coupled carrier-carrier plasmas. Under suitable conditions, the piezoelectric coupling of electrons with acoustic phonons can result in an amplification o

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Hybrid Optical Phonons in Lower Dimensional Systems and Their Interaction with Hot Electrons,pared to microscopic lattice dynamical calculations.. Two contrasting continuum models have been employed to date in order to describe electron-optical phonon interactions. The first of these is the so-called dielectric continuum (DC) model. which treats the confined modes within the Einstein approx

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