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Titlebook: Near Infrared Detectors Based on Silicon Supersaturated with Transition Metals; Daniel Montero álvarez Book 2021 The Editor(s) (if applica

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發(fā)表于 2025-3-21 16:17:18 | 只看該作者 |倒序?yàn)g覽 |閱讀模式
書目名稱Near Infrared Detectors Based on Silicon Supersaturated with Transition Metals
編輯Daniel Montero álvarez
視頻videohttp://file.papertrans.cn/663/662298/662298.mp4
概述Nominated as an outstanding Ph.D. thesis by the Universidad Complutense de Madrid, Madrid, Spain.Provides basic research in a novel material based on silicon, which is later integrated into an industr
叢書名稱Springer Theses
圖書封面Titlebook: Near Infrared Detectors Based on Silicon Supersaturated with Transition Metals;  Daniel Montero álvarez Book 2021 The Editor(s) (if applica
描述.This thesis makes a significant contribution to the development of cheaper Si-based Infrared detectors, operating at room temperature. In particular, the work is focused in the integration of the Ti supersaturated Si material into a CMOS Image Sensor route, the technology of choice for imaging nowadays due to its low-cost and high resolution. First, the material is fabricated using ion implantation of Ti atoms at high concentrations. Afterwards, the crystallinity is recovered by means of a pulsed laser process. The material is used to fabricate planar photodiodes, which are later characterized using current-voltage and quantum efficiency measurements. The prototypes showed improved sub-bandgap responsivity up to 0.45 eV at room temperature. The work is further supported by a collaboration with STMicroelectronics, where the supersaturated material was integrated into CMOS-based sensors at industry level. The results show that Ti supersaturated Si is compatible in terms of contamination, process integration and uniformity. The devices showed similar performance to non-implanted devices in the visible region. This fact leaves the door open for further integration of supersaturated ma
出版日期Book 2021
關(guān)鍵詞Infrared Cmos Image Sensor; Sub-bandgap Absorption Silicon; Supersaturated Silicon; Nanosecond Laser An
版次1
doihttps://doi.org/10.1007/978-3-030-63826-9
isbn_softcover978-3-030-63828-3
isbn_ebook978-3-030-63826-9Series ISSN 2190-5053 Series E-ISSN 2190-5061
issn_series 2190-5053
copyrightThe Editor(s) (if applicable) and The Author(s), under exclusive license to Springer Nature Switzerl
The information of publication is updating

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Daniel Montero álvarezNominated as an outstanding Ph.D. thesis by the Universidad Complutense de Madrid, Madrid, Spain.Provides basic research in a novel material based on silicon, which is later integrated into an industr
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Springer Theseshttp://image.papertrans.cn/n/image/662298.jpg
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https://doi.org/10.1007/978-3-030-63826-9Infrared Cmos Image Sensor; Sub-bandgap Absorption Silicon; Supersaturated Silicon; Nanosecond Laser An
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Introduction, enablers of our modern society, being silicon the most important of them. There are many things that can be done with Si chips. Unfortunately, detecting infrared rays, at least at room temperature,?is not one of them. In this chapter, we explore the current infrared sensing technology?and their lim
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發(fā)表于 2025-3-23 03:11:08 | 只看該作者
Results: NLA Using a Short Pulse Duration KrF Laser,f 25?ns, with a wavelength of 248?nm. All the samples analysed in this chapter are based on 50.8?mm wafers and have been implanted in the Faculty of Physics, using the available ion implanter belonging to CAI Técnicas Físicas. We also describe the fabrication process of the first prototypes of micro
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