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Titlebook: Nanowire Field Effect Transistors: Principles and Applications; Dae Mann Kim,Yoon-Ha Jeong Book 2014 Springer Science+Business Media New Y

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書目名稱Nanowire Field Effect Transistors: Principles and Applications
編輯Dae Mann Kim,Yoon-Ha Jeong
視頻videohttp://file.papertrans.cn/662/661171/661171.mp4
概述Covers the basic physics and electronics leading to the conceptual understanding of NWFET and its practical aspects.Provides modeling of NWFET in analogy and comparison with the well known MOSFET mode
圖書封面Titlebook: Nanowire Field Effect Transistors: Principles and Applications;  Dae Mann Kim,Yoon-Ha Jeong Book 2014 Springer Science+Business Media New Y
描述“Nanowire Field Effect Transistor: Basic Principles and Applications” places an emphasis on the application aspects of nanowire field effect transistors (NWFET). Device physics and electronics are discussed in a compact manner, together with the p-n junction diode and MOSFET, the former as an essential element in NWFET and the latter as a general background of the FET. .During this discussion, the photo-diode, solar cell, LED, LD, DRAM, flash EEPROM and sensors are highlighted to pave the way for similar applications of NWFET. Modeling is discussed in close analogy and comparison with MOSFETs. Contributors focus on processing, electrostatic discharge (ESD) and application of NWFET. This includes coverage of solar and memory cells, biological and chemical sensors, displays and atomic scale light emitting diodes. .Appropriate for scientists and engineers interested in acquiring a working knowledge of NWFET as well as graduate students specializing in this subject.
出版日期Book 2014
關(guān)鍵詞ESD Design; Electrostatics; MOS; MOSFET; NWFET; Nanoelectronics; Nanowires; Semiconductors; Sensors
版次1
doihttps://doi.org/10.1007/978-1-4614-8124-9
isbn_softcover978-1-4939-4572-6
isbn_ebook978-1-4614-8124-9
copyrightSpringer Science+Business Media New York 2014
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Silicon Nanowire Field-Effect Transistor, are highlighted, thereby bringing out features unique to SNWFET. Also, an emphasis is placed upon the underlying device physics rather than the device modeling per se. The goal of this chapter is to provide a background by which to comprehend the theories being developed rapidly for SNWFETs.
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Yang-Kyu Choi,Dong-Il Moon,Ji-Min Choi,Jae-Hyuk Ahnosophy and the history of ideas, but to all those dealing with Anglo-German reception during the nineteenth century, reveals Schelling to be a kind of uncanny presence underwriting British thought..978-3-030-07113-4978-3-319-95906-1
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