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Titlebook: Nanowire Electronics; Guozhen Shen,Yu-Lun Chueh Book 2019 Springer Nature Singapore Pte Ltd. 2019 Energy conversion and Storage.Field emit

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31#
發(fā)表于 2025-3-26 23:15:37 | 只看該作者
Silicon Carbide Nanowires and Electronics, such as outstanding mechanical properties, excellent chemical inertness, high thermal stability, as well as high thermal conductivity, which allow the SiC materials having the unique advantage to serve under high-temperature/high-voltage/high-power harsh environments. In this chapter, firstly, we p
32#
發(fā)表于 2025-3-27 03:48:34 | 只看該作者
Nanowire Bioelectronics,g building blocks for bioelectronics due to their small size, large surface area, excellent electrical properties, and intrinsic readout signals. Biological elements, as small as ions and molecules and as large as whole organs, have been successfully analyzed or interrogated with nanowire bioelectro
33#
發(fā)表于 2025-3-27 06:10:56 | 只看該作者
Nanowires for Triboelectric Nanogenerators,ionality, and so forth. Such next-generation multifunctional electronic modules will be constituted by large numbers of small functional elements and sensors. As the growing requirement for such functional electronics, portable power sources have become more and more important in our daily life. A t
34#
發(fā)表于 2025-3-27 10:57:33 | 只看該作者
Nanowire-Based Lasers,intensive research has been conducted in the use of nanowires for sub-wavelength laser systems. In this chapter, we discuss the lasing mechanisms in nanowire and latest, most effective materials for nanowire lasers. An exploration of wavelength tunability is followed by some of the latest methods in
35#
發(fā)表于 2025-3-27 16:11:21 | 只看該作者
36#
發(fā)表于 2025-3-27 17:45:59 | 只看該作者
Probing Material Interfaces in Nanowire Devices Using Capacitive Measurements,lk Si material. For InAs nanowires, I used the C-V technique to extract the trap density of its native surface. The trap lifetime in these InAs nanowires, extracted using the C-V method, depends?on the energy separation between the trap state and the conduction band, similarly to bulk materials. Las
37#
發(fā)表于 2025-3-28 01:02:59 | 只看該作者
Metal-Semiconductor Compound Contacts to Nanowire Transistors,tinguish the rate-limiting steps and to extrapolate the reaction kinetic parameters. In Sect. ., we will introduce electrical properties of NW transistors with these compound contacts and summarize different applications of these contacts including ultrashort channel devices. This entire chapter is
38#
發(fā)表于 2025-3-28 04:32:01 | 只看該作者
39#
發(fā)表于 2025-3-28 09:36:31 | 只看該作者
One-Dimensional Nanowire-Based Heterostructures for Gas Sensors,t discussed. We then place the focus on highlighting the sensing capability of nanowire heterostructures, i.e., metal nanoparticle/metal oxide nanowires and binary metal oxide (p-n and n-n) nanowires. Finally, we give some personal perspectives on the future developments in this area.
40#
發(fā)表于 2025-3-28 13:22:13 | 只看該作者
Nanowire Bioelectronics,ection . discusses 3D and seamless interfacing between nanowire electronic devices and cardiac/neural tissues. This chapter ends with a brief summary of future challenges and prospects of nanowire bioelectronics.
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