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Titlebook: Nanowire Electronics; Guozhen Shen,Yu-Lun Chueh Book 2019 Springer Nature Singapore Pte Ltd. 2019 Energy conversion and Storage.Field emit

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21#
發(fā)表于 2025-3-25 05:47:57 | 只看該作者
Jidong Shi,Ying Fang]. Bourke on Scheler‘s value-theory. Three years later when I returned to complete my doctorate work at St. Louis University I returned also to the study of Max Scheler. In the meantime, several more volumes of the Gesammelte Werke had appeared, several new translations of Scheler were published and
22#
發(fā)表于 2025-3-25 08:57:35 | 只看該作者
Ying-Chih Lai]. Bourke on Scheler‘s value-theory. Three years later when I returned to complete my doctorate work at St. Louis University I returned also to the study of Max Scheler. In the meantime, several more volumes of the Gesammelte Werke had appeared, several new translations of Scheler were published and
23#
發(fā)表于 2025-3-25 13:50:52 | 只看該作者
24#
發(fā)表于 2025-3-25 16:32:47 | 只看該作者
X-Ray Spectroscopic Analysis of Electronic Properties of One-Dimensional Nanostructured Materials,lent physical and chemical properties, including a high surface area, light absorption, and efficient separation of electrons/holes. Although these nanomaterials have been extensively studied, a detailed experimental investigation of the microscopic phenomena of electron-orbital interaction, lattice
25#
發(fā)表于 2025-3-25 23:15:19 | 只看該作者
26#
發(fā)表于 2025-3-26 01:51:33 | 只看該作者
,Properties Engineering of III–V Nanowires for Electronic Application,er, we need to know how to manipulate their electrical properties before transferring them from laboratory to daily life. Therefore, the manipulation of their electrical properties becomes important for practical applications. The aim of this chapter is to review and discuss the strategies on how to
27#
發(fā)表于 2025-3-26 05:46:53 | 只看該作者
Probing Material Interfaces in Nanowire Devices Using Capacitive Measurements,als. In this chapter, I demonstrate a method to study junctions and interfaces in one-dimensional nanoscale semiconductor materials. Examined are insulator interface and dopant profile in vapor-liquid-solid (VLS)?-grown silicon nanowires, the electronic properties of the native surface of InAs nanow
28#
發(fā)表于 2025-3-26 11:33:50 | 只看該作者
29#
發(fā)表于 2025-3-26 13:00:44 | 只看該作者
Nanowire-Based Transparent Conductive Electrodes,llent electrical conductivity. Despite indium tin oxide (ITO) being the most commonly used TCE nowadays, developing the potential substitution materials of ITO is necessary due to the (1) high cost of indium and (2) the brittleness of ITO film, which makes ITO film difficult to use in flexible subst
30#
發(fā)表于 2025-3-26 17:16:44 | 只看該作者
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