Titlebook: Nano-Optoelectronics; Concepts, Physics an Marius Grundmann Book 2002 Springer-Verlag Berlin Heidelberg 2002 electronics.laser.laser diode.

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書目名稱Nano-Optoelectronics影響因子(影響力)




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Stress-Engineered Quantum Dots: Nature’s Waysland nation of Sri Lanka. It is no surprise then that what we today dub as self-assembled quantum dots, the dominant theme of this dedicatory volume, also originate in the chance discovery of the existence of coherent (i.e., defect-free) three-dimensional (3D) islands in strained semiconductor hete

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Characterization of Structure and Composition of Quantum Dots by Transmission Electron Microscopylectron microscopy (HREM) and conventional transmission electron microscopy (TEM). The present overview describes the possibilities of investigating quantum dot (QD) structures by TEM and HREM, discussing advantages and disadvantages, presuppositions needed, limitations, and the problems of contrast

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X-ray Characterization of Group III-Nitrides (Al,In,Ga)N leading to the commercialization of optoelectronic and electronic devices such as green and blue light emitting diodes, the blue laser, or solar blind ultraviolet photodetectors [.]. In spite of remarkable progress in the growth of high-quality group III- nitride epitaxial films by metalorganic che

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Theory of the Electronic and Optical Properties of InGaAs/GaAs Quantum Dotsostructures which exhibit quantum confinement of charge carriers in all three spatial dimensions, called quantum dots (QD) [.–.]. The wave vector spaces of confined electrons and holes in QDs are zero-dimensional (0D), giving rise to unique optical properties. Theoretical predictions of the electron

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Modulation Spectroscopy and Surface Photovoltage Spectroscopy of Semiconductor Quantum Wires and Quares (QWRs) and quantum dots (QDs) due to their striking quantum mechanical properties and their potential for device applications in micro- and optoelectronics [.–.]. For example, QDs refer to nanostructure sized, giant (10.-10. atoms) molecules made from ordinary inorganic semiconductor materials s

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Optical Properties of Self-Organized Quantum Dotsslands in the InGaAs/GaAs [.] and Ge/Si [.] systems were shown to be coherent and dislocation-free. The self-organized growth of QDs appeals by the conventional layer-by-layer deposition on planar substrates, the lack of non-radiative recombination due to epitaxial interfaces, typical dimensions in