找回密碼
 To register

QQ登錄

只需一步,快速開始

掃一掃,訪問微社區(qū)

打印 上一主題 下一主題

Titlebook: Multigate Transistors for High Frequency Applications; K. Sivasankaran,Partha Sharathi Mallick Book 2023 The Editor(s) (if applicable) and

[復(fù)制鏈接]
查看: 30259|回復(fù): 35
樓主
發(fā)表于 2025-3-21 16:38:30 | 只看該作者 |倒序瀏覽 |閱讀模式
書目名稱Multigate Transistors for High Frequency Applications
編輯K. Sivasankaran,Partha Sharathi Mallick
視頻videohttp://file.papertrans.cn/641/640445/640445.mp4
概述Discusses RF Stability for Multigate Transistors.Highlights pedagogical features of RF modeling, design optimization of multigate transistors.Illustrations/diagrams and tables of results are included
叢書名稱Springer Tracts in Electrical and Electronics Engineering
圖書封面Titlebook: Multigate Transistors for High Frequency Applications;  K. Sivasankaran,Partha Sharathi Mallick Book 2023 The Editor(s) (if applicable) and
描述.This book discusses the evolution of multigate transistors, the design challenges of transistors for high-frequency applications, and the design and modeling of multigate transistors for high-frequency applications. The contents particularly focus on the cut-off frequency and maximum oscillation frequency of different multigate structures. RF stability modeling for multigate transistors is presented, which can help to understand the relation between the small-signal parameter and the physical parameter of the device for optimization. This is a useful reference to those in academia and industry..
出版日期Book 2023
關(guān)鍵詞Multigate Transistor; RF Stability; High Frequency; Small Signal Parameter; Cut-off Frequency; Maximum Os
版次1
doihttps://doi.org/10.1007/978-981-99-0157-9
isbn_softcover978-981-99-0159-3
isbn_ebook978-981-99-0157-9Series ISSN 2731-4200 Series E-ISSN 2731-4219
issn_series 2731-4200
copyrightThe Editor(s) (if applicable) and The Author(s), under exclusive license to Springer Nature Singapor
The information of publication is updating

書目名稱Multigate Transistors for High Frequency Applications影響因子(影響力)




書目名稱Multigate Transistors for High Frequency Applications影響因子(影響力)學(xué)科排名




書目名稱Multigate Transistors for High Frequency Applications網(wǎng)絡(luò)公開度




書目名稱Multigate Transistors for High Frequency Applications網(wǎng)絡(luò)公開度學(xué)科排名




書目名稱Multigate Transistors for High Frequency Applications被引頻次




書目名稱Multigate Transistors for High Frequency Applications被引頻次學(xué)科排名




書目名稱Multigate Transistors for High Frequency Applications年度引用




書目名稱Multigate Transistors for High Frequency Applications年度引用學(xué)科排名




書目名稱Multigate Transistors for High Frequency Applications讀者反饋




書目名稱Multigate Transistors for High Frequency Applications讀者反饋學(xué)科排名




單選投票, 共有 0 人參與投票
 

0票 0%

Perfect with Aesthetics

 

0票 0%

Better Implies Difficulty

 

0票 0%

Good and Satisfactory

 

0票 0%

Adverse Performance

 

0票 0%

Disdainful Garbage

您所在的用戶組沒有投票權(quán)限
沙發(fā)
發(fā)表于 2025-3-21 23:25:12 | 只看該作者
2731-4200 is presented, which can help to understand the relation between the small-signal parameter and the physical parameter of the device for optimization. This is a useful reference to those in academia and industry..978-981-99-0159-3978-981-99-0157-9Series ISSN 2731-4200 Series E-ISSN 2731-4219
板凳
發(fā)表于 2025-3-22 03:37:54 | 只看該作者
地板
發(fā)表于 2025-3-22 06:45:13 | 只看該作者
Book 2023equency of different multigate structures. RF stability modeling for multigate transistors is presented, which can help to understand the relation between the small-signal parameter and the physical parameter of the device for optimization. This is a useful reference to those in academia and industry..
5#
發(fā)表于 2025-3-22 12:17:45 | 只看該作者
6#
發(fā)表于 2025-3-22 15:57:26 | 只看該作者
7#
發(fā)表于 2025-3-22 18:27:39 | 只看該作者
Springer Tracts in Electrical and Electronics Engineeringhttp://image.papertrans.cn/n/image/640445.jpg
8#
發(fā)表于 2025-3-23 01:17:08 | 只看該作者
https://doi.org/10.1007/978-981-99-0157-9Multigate Transistor; RF Stability; High Frequency; Small Signal Parameter; Cut-off Frequency; Maximum Os
9#
發(fā)表于 2025-3-23 02:14:00 | 只看該作者
K. Sivasankaran,Partha Sharathi MallickDiscusses RF Stability for Multigate Transistors.Highlights pedagogical features of RF modeling, design optimization of multigate transistors.Illustrations/diagrams and tables of results are included
10#
發(fā)表于 2025-3-23 08:41:44 | 只看該作者
Multigate Transistors for High Frequency Applications
 關(guān)于派博傳思  派博傳思旗下網(wǎng)站  友情鏈接
派博傳思介紹 公司地理位置 論文服務(wù)流程 影響因子官網(wǎng) 吾愛論文網(wǎng) 大講堂 北京大學(xué) Oxford Uni. Harvard Uni.
發(fā)展歷史沿革 期刊點評 投稿經(jīng)驗總結(jié) SCIENCEGARD IMPACTFACTOR 派博系數(shù) 清華大學(xué) Yale Uni. Stanford Uni.
QQ|Archiver|手機版|小黑屋| 派博傳思國際 ( 京公網(wǎng)安備110108008328) GMT+8, 2025-10-7 13:16
Copyright © 2001-2015 派博傳思   京公網(wǎng)安備110108008328 版權(quán)所有 All rights reserved
快速回復(fù) 返回頂部 返回列表
龙岩市| 哈巴河县| 渝北区| 芒康县| 澄江县| 洱源县| 五指山市| 赞皇县| 哈密市| 天祝| 宿州市| 堆龙德庆县| 嘉黎县| 抚州市| 西林县| 邯郸市| 濉溪县| 夹江县| 岢岚县| 安丘市| 区。| 方山县| 神农架林区| 定陶县| 禄丰县| 城步| 浙江省| 武隆县| 陕西省| 安宁市| 涿州市| 盘山县| 鄂伦春自治旗| 海兴县| 安丘市| 南京市| 沂水县| 大渡口区| 安陆市| 连江县| 宁强县|