| 書目名稱 | Modeling Bipolar Power Semiconductor Devices | | 編輯 | Tanya K. Gachovska,Jerry L. Hudgins,Patrick R. Pal | | 視頻video | http://file.papertrans.cn/636/635938/635938.mp4 | | 叢書名稱 | Synthesis Lectures on Power Electronics | | 圖書封面 |  | | 描述 | This book presents physics-based models of bipolar power semiconductor devices and their implementation in MATLAB and Simulink. The devices are subdivided into different regions, and the operation in each region, along with the interactions at the interfaces which are analyzed using basic semiconductor physics equations that govern their behavior. The Fourier series solution is used to solve the ambipolar diffusion equation in the lightly doped drift region of the devices. In addition to the external electrical characteristics, internal physical and electrical information, such as the junction voltages and the carrier distribution in different regions of the device, can be obtained using the models. | | 出版日期 | Book 2013 | | 版次 | 1 | | doi | https://doi.org/10.1007/978-3-031-02498-6 | | isbn_softcover | 978-3-031-01370-6 | | isbn_ebook | 978-3-031-02498-6Series ISSN 1931-9525 Series E-ISSN 1931-9533 | | issn_series | 1931-9525 | | copyright | Springer Nature Switzerland AG 2013 |
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