| 書目名稱 | Microwave Semiconductor Devices | | 編輯 | Sigfrid Yngvesson | | 視頻video | http://file.papertrans.cn/634/633598/633598.mp4 | | 叢書名稱 | The Springer International Series in Engineering and Computer Science | | 圖書封面 |  | | 描述 | We have reached the double conclusion: that invention is choice, that this choice is imperatively governed by the sense of scientific beauty. Hadamard (1945), Princeton University Press, by permission. The great majority of all sources and amplifiers of microwave energy, and all devices for receiving or detecting microwaves, use a semiconductor active element. The development of microwave semiconductor devices, de- scribed in this book, has proceeded from the simpler, two-terminal, devices such as GUNN or IMPATT devices, which originated in the 1960s, to the sophisticated monolithic circuit MESFET three-terminal active elements, of the 1980s and 1990s. The microwave field has experienced a renais- sance in electrical engineering departments in the last few years, and much of this growth has been associated with microwave semiconductor devices. The University of Massachusetts has recently developed a well recognized program in microwave engineering. Much of the momentum for this pro- gram has been provided by interaction with industrial companies, and the influx of a large number of industry-supported students. This program had a need for a course in microwave semiconductor devices, | | 出版日期 | Book 1991 | | 關(guān)鍵詞 | Diode; Hochfrequenz; bipolar junction transistor; bipolar power transistor; development; electrical engin | | 版次 | 1 | | doi | https://doi.org/10.1007/978-1-4615-3970-4 | | isbn_softcover | 978-1-4613-6773-4 | | isbn_ebook | 978-1-4615-3970-4Series ISSN 0893-3405 | | issn_series | 0893-3405 | | copyright | Kluwer Academic Publishers 1991 |
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