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Titlebook: Microwave Electronic Devices; Theo G. Roer Book 1994 Springer Science+Business Media Dordrecht 1994 Diode.Modulation.circuit.communication

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31#
發(fā)表于 2025-3-27 00:47:29 | 只看該作者
History,rowaves started already with the first experiments of Heinrich Hertz around 1887. Hertz used a spark transmitter that produced signals in a very large frequency band and he selected from these a band around 420 MHz with an antenna that measured half a wavelength at this frequency. The receiving ante
32#
發(fā)表于 2025-3-27 01:32:10 | 只看該作者
33#
發(fā)表于 2025-3-27 05:30:57 | 只看該作者
34#
發(fā)表于 2025-3-27 09:35:18 | 只看該作者
Carrier transport and noise in devices,nowledge is called a model. A device model tells us approximately how a device reacts to an electromagnetic field in which it is placed. For semiconductor devices, which in general are small compared with a wavelength, this simplifies to the response of the terminal currents to the terminal voltages
35#
發(fā)表于 2025-3-27 13:48:21 | 只看該作者
36#
發(fā)表于 2025-3-27 21:30:46 | 只看該作者
37#
發(fā)表于 2025-3-27 23:58:58 | 只看該作者
Transmission lines and microwave circuits,n direction then the propagation of a sinusoidal wave can be described by a function exp(jω. — γz) which is common to all field components. The constant y is called the . and is in general a complex quantity. Its real part (α) is called the . and its imaginary part (.) the .. For lossless lines the
38#
發(fā)表于 2025-3-28 03:50:25 | 只看該作者
Detection, modulation and frequency conversion,Fig. 8.1(a)). Its operation is based on the rectifying effect of a metal-semiconductor junction. Modern forms are the planar Schottky diode (Fig. 8.1(b)) and the beam lead diode (Fig. 8.1(c)). p-n junctions are not usable in the microwave range because of the charge storage under forward bias which
39#
發(fā)表于 2025-3-28 08:31:11 | 只看該作者
40#
發(fā)表于 2025-3-28 12:31:18 | 只看該作者
Monolithic microwave integrated circuits,e. The microwave monolithic ICs (MMICs) are direct descendants of the hybrid microstrip integrated circuits (MICs) in which the active and some of the passive components are mounted as discrete devices on dielectric substrates. These have been treated in , and . In MMICs the substrate has to be semi
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