Titlebook: Microscopy of Semiconducting Materials 2007; Proceedings of the 1 A. G. Cullis,P. A. Midgley Conference proceedings 20081st edition Springe

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Strain Relaxation in an AlGaN/GaN Quantum Well Systemtudied by weak beam dark field (WBDF) TEM. Threading dislocations form ‘staircases’ in the stack, generating a short misfit segment at the lower interface of each well. By imaging dislocations at different tilts and opposite values of the deviation parameter ., it is established that the misfit segm

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Characterisation of InxAl1-xN Epilayers Grown on GaNth temperature was increased, and surface roughness at the 1 μm scale was observed to decrease simultaneously. However, due to macroscopic cracking of the samples grown at higher temperature, broader scale surface roughness reached a minimum at 800 °C, which corresponded to the layer most closely la

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InN Nanorods and Epilayers: Similarities and Differences template-free hydride metal-organic vapor phase epitaxy (.). Single crystal nanorod growth was obtained on all substrates. However, the shape of the nanorods varied depending on the substrate used. For example, nanorods grown on r-plane sapphire and (111) Si have sharp tips. In contrast, growth on

Osmosis

Residual Strain Variations in MBE-Grown InN Thin Filmsth a well-defined orientation relationship, having threading dislocations as the dominant structural defect. Electron microscopy, Raman and X-ray absorption fine structure experiments reveal that the epilayers are subject to biaxial residual strain, either compressive or tensile. The origin of compr

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