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Titlebook: Microelectronic Materials and Processes; R. A. Levy Book 1989 Kluwer Academic Publishers 1989 Metall.X-Ray.alloy.crystal.semiconductors

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樓主: 駝峰
41#
發(fā)表于 2025-3-28 17:53:32 | 只看該作者
42#
發(fā)表于 2025-3-28 22:40:49 | 只看該作者
Forefront of Photolithographic Materials,nd low temperature processing, etc. But, perhaps of greatest importance has been the steady evolution of optical lithography from the “many micron” status of the early seventies, to reaching the one micrometer barrier in the 80s and bringing the submicrometer regime into production reality today.
43#
發(fā)表于 2025-3-29 01:44:19 | 只看該作者
44#
發(fā)表于 2025-3-29 04:02:35 | 只看該作者
Physical Vapor Deposition,needs. However, evaporative and sputter deposition techniques are still the primary physical vapor deposition methods used for microcircuit fabrication and this review chapter will focus on their similarities and differences as they apply to microcircuit fabrication in both Si and GaAs.
45#
發(fā)表于 2025-3-29 10:20:31 | 只看該作者
46#
發(fā)表于 2025-3-29 12:15:54 | 只看該作者
47#
發(fā)表于 2025-3-29 17:31:48 | 只看該作者
Dry Etching Processes,lowing, the properties of rf glow discharges (plasmas) are described as they relate to thin film etching [1]. Materials commonly used in integrated circuits (IC) fabrication are treated individually. Process considerations such as etch profiles, process monotoring, and safety aspects are discussed.
48#
發(fā)表于 2025-3-29 22:18:31 | 只看該作者
Book 1989sume lower power. The fabrication of integrated circuits containing in excess of four million components per chip with design rules in the submicron range has now been made possible by the introduction of innovative circuit designs and the development of new microelectronic materials and processes.
49#
發(fā)表于 2025-3-30 00:25:48 | 只看該作者
50#
發(fā)表于 2025-3-30 04:39:11 | 只看該作者
Book 1989terials and process engineering. Subjects in materials science include silicon, silicides, resists, dielectrics, and interconnect metallization. Subjects in process engineering include crystal growth, epitaxy, oxidation, thin film deposition, fine-line lithography, dry etching, ion implantation, and
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