Titlebook: Micro-Electronics and Telecommunication Engineering; Proceedings of 4th I Devendra Kumar Sharma,Le Hoang Son,Korhan Cengiz Conference proce

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書目名稱Micro-Electronics and Telecommunication Engineering影響因子(影響力)




書目名稱Micro-Electronics and Telecommunication Engineering影響因子(影響力)學科排名




書目名稱Micro-Electronics and Telecommunication Engineering網(wǎng)絡公開度




書目名稱Micro-Electronics and Telecommunication Engineering網(wǎng)絡公開度學科排名




書目名稱Micro-Electronics and Telecommunication Engineering被引頻次




書目名稱Micro-Electronics and Telecommunication Engineering被引頻次學科排名




書目名稱Micro-Electronics and Telecommunication Engineering年度引用




書目名稱Micro-Electronics and Telecommunication Engineering年度引用學科排名




書目名稱Micro-Electronics and Telecommunication Engineering讀者反饋




書目名稱Micro-Electronics and Telecommunication Engineering讀者反饋學科排名

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2367-3370 e variety of topics in micro-electronics and telecommunication engineering, including micro-electronic engineering, computational remote sensing, computer science and intelligent systems, signal and image processing, and information and communication technology.978-981-33-4686-4978-981-33-4687-1Series ISSN 2367-3370 Series E-ISSN 2367-3389

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Conference proceedings 2021 of Science and Technology, Ghaziabad, India, during 26–27 September 2020. It covers a wide variety of topics in micro-electronics and telecommunication engineering, including micro-electronic engineering, computational remote sensing, computer science and intelligent systems, signal and image proce

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Assessing the Suitability of DMG-HK Trapezoidal FinFET for High Temperature Applications,performance at high temperature as compared to conventional devices. The improvement is seen in terms of reduced threshold voltage sensitivity and DIBL with change in temperature along with suppressed hot carrier effects and improved subthreshold slope.

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Comparative Study of CMOS and FinFET-Based SRAM Cell Using SVL Technique, and WSNM, respectively, and 80.93% reduction in leakage power. FinFET design SRAM cells result in higher RSNM, HSNM, and WSNM. For simulation, the HSPICE tool is used at 32?nm PTM CMOS and FinFET transistor with a supply voltage of 900?mV and 25?°C temperature.

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Different Diagnostic Aids and the Improved Scope of Establishing Early Breast Cancer Diagnosis,rognosis and well-being of the condition. This paper presents the detailed review of types of cancer, its diagnosis, treatments and also the recent methods of diagnosis using deep learning techniques.

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Machine Learning Technique for Target-Based Sentiment Analysis,l sentiment analysis. Machine learning approaches alongside semantic idea driven methodology can create another age of calculations that can react to language and significant level settings. This gap will likewise leave an enormous region for the scientists to find out experimental and emotional views of a human