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Titlebook: Metallization and Metal-Semiconductor Interfaces; Inder P. Batra Book 1989 Plenum Press, New York 1989 Doping.Metall.Semiconductor.Tunnel

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樓主: 武士精神
21#
發(fā)表于 2025-3-25 05:42:11 | 只看該作者
A. Kahn,K. Stiles,D. Mao,S. F. Horng,K. Young,J. McKinley,D. G. Kilday,G. Margaritondornative but coexisting conformations. Separation and purification of RNA is generally required for investigating the structure and function of RNA, such as RNA catalysis and RNA structure determination by nuclear magnetic resonance or crystallography. Separation and purification of RNA is also requi
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發(fā)表于 2025-3-26 06:20:31 | 只看該作者
ir nuclear retention and ultimately the degradation of their mRNA component by the 3′–5′ activity of the exosome-associated exonuclease Rrp6. This mRNP quality control process is stimulated by the NNS complex (Nrd1-Nab3-Sen1), which otherwise mediates termination, processing, and decay of ncRNAs. Th
28#
發(fā)表于 2025-3-26 09:06:19 | 只看該作者
Introduction to Metallization and Metal-Semiconductor Interfacescircuits. One such interface is a junction between a metal and a semiconductor; the components based on these are widely used in the microelectronics industry. A junction between a metal and a semiconductor is called a Schottky junction, named after W. Schottky. Nearly half a century ago, Schottky p
29#
發(fā)表于 2025-3-26 15:33:11 | 只看該作者
The Role of Defects and Metal States at the Metal-Semiconductor Interfacel induced gap states (MIGS) models . and defect models.. These two types of models are mutually exclusive, as the MIGS models generally ignore the influence of defects and the defect models, for their part, ignore the importance of screening by the metal. Historically the MIGS models preceded the ot
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發(fā)表于 2025-3-26 17:06:54 | 只看該作者
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