Titlebook: Metal Impurities in Silicon- and Germanium-Based Technologies; Origin, Characteriza Cor Claeys,Eddy Simoen Book 2018 Springer International

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Cor Claeys,Eddy Simoen, CVM proposed a dramatically simple approach that skipped many of the steps in traditional risk assessment. The basic idea was to assume that human health risks were directly proportional to some suitably defined exposure metric. In symbols: Risk = K × Exposure, where “Exposure” would be defined in

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0933-033X lectronic semiconductor devices and circuits. Adopting an interdisciplinary approach, it combines perspectives from e.g. material science, defect engineering, device processing, defect and device characterization, and device physics and engineering..978-3-030-06747-2978-3-319-93925-4Series ISSN 0933-033X Series E-ISSN 2196-2812

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Electrical Activity of Iron and Copper in Si, SiGe and Ge, deep levels, associated with Fe (Cu) will be described in detail, both in Si and (Si)Ge. An overview of the deep-level parameters of the different point and extended defects will be given. Also the activation of pre-existing extended defects will be discussed. Finally, dedicated, mainly lifetime-ba