找回密碼
 To register

QQ登錄

只需一步,快速開始

掃一掃,訪問微社區(qū)

打印 上一主題 下一主題

Titlebook: Memristor Technology: Synthesis and Modeling for Sensing and Security Applications; Heba Abunahla,Baker Mohammad Book 2018 Springer Intern

[復(fù)制鏈接]
查看: 29210|回復(fù): 37
樓主
發(fā)表于 2025-3-21 19:35:24 | 只看該作者 |倒序?yàn)g覽 |閱讀模式
書目名稱Memristor Technology: Synthesis and Modeling for Sensing and Security Applications
編輯Heba Abunahla,Baker Mohammad
視頻videohttp://file.papertrans.cn/631/630543/630543.mp4
概述Discusses a detailed, physics-based mathematical model, which can guide the design and fabrication process of memristive devices.Describes detailed fabrication process steps for real memristor devices
叢書名稱Analog Circuits and Signal Processing
圖書封面Titlebook: Memristor Technology: Synthesis and Modeling for Sensing and Security Applications;  Heba Abunahla,Baker Mohammad Book 2018 Springer Intern
描述.This book provides readers with a single-source guide to fabricate, characterize and model memristor devices for sensing applications.? The authors describe a correlated, physics-based model to simulate and predict the behavior of devices fabricated with different oxide materials, active layer thickness, and operating temperature.? They discuss memristors from various perspectives, including working mechanisms, different synthesis methods, characterization procedures, and device employment in radiation sensing and security applications..
出版日期Book 2018
關(guān)鍵詞Memristor; Memristor Devices; Memristor Based Circuits; Memristive Systems; Memristor Devices for radiat
版次1
doihttps://doi.org/10.1007/978-3-319-65699-1
isbn_softcover978-3-319-88083-9
isbn_ebook978-3-319-65699-1Series ISSN 1872-082X Series E-ISSN 2197-1854
issn_series 1872-082X
copyrightSpringer International Publishing AG 2018
The information of publication is updating

書目名稱Memristor Technology: Synthesis and Modeling for Sensing and Security Applications影響因子(影響力)




書目名稱Memristor Technology: Synthesis and Modeling for Sensing and Security Applications影響因子(影響力)學(xué)科排名




書目名稱Memristor Technology: Synthesis and Modeling for Sensing and Security Applications網(wǎng)絡(luò)公開度




書目名稱Memristor Technology: Synthesis and Modeling for Sensing and Security Applications網(wǎng)絡(luò)公開度學(xué)科排名




書目名稱Memristor Technology: Synthesis and Modeling for Sensing and Security Applications被引頻次




書目名稱Memristor Technology: Synthesis and Modeling for Sensing and Security Applications被引頻次學(xué)科排名




書目名稱Memristor Technology: Synthesis and Modeling for Sensing and Security Applications年度引用




書目名稱Memristor Technology: Synthesis and Modeling for Sensing and Security Applications年度引用學(xué)科排名




書目名稱Memristor Technology: Synthesis and Modeling for Sensing and Security Applications讀者反饋




書目名稱Memristor Technology: Synthesis and Modeling for Sensing and Security Applications讀者反饋學(xué)科排名




單選投票, 共有 1 人參與投票
 

1票 100.00%

Perfect with Aesthetics

 

0票 0.00%

Better Implies Difficulty

 

0票 0.00%

Good and Satisfactory

 

0票 0.00%

Adverse Performance

 

0票 0.00%

Disdainful Garbage

您所在的用戶組沒有投票權(quán)限
沙發(fā)
發(fā)表于 2025-3-21 22:05:25 | 只看該作者
Heba Abunahla,Baker MohammadDiscusses a detailed, physics-based mathematical model, which can guide the design and fabrication process of memristive devices.Describes detailed fabrication process steps for real memristor devices
板凳
發(fā)表于 2025-3-22 04:04:13 | 只看該作者
地板
發(fā)表于 2025-3-22 05:03:11 | 只看該作者
5#
發(fā)表于 2025-3-22 10:43:09 | 只看該作者
Memristor Technology: Synthesis and Modeling for Sensing and Security Applications978-3-319-65699-1Series ISSN 1872-082X Series E-ISSN 2197-1854
6#
發(fā)表于 2025-3-22 15:50:04 | 只看該作者
,Synthesis and Characterization of Micro-Thick TiO2?and HfO2?Memristors, of the micro-thick HfO. devices provided here is to investigate the switchability of the novel system and to study the effect of changing key parameters such as (i) the electrode material and (ii) the drying temperature during solgel processing on the resistive switching behavior. The results prese
7#
發(fā)表于 2025-3-22 20:21:23 | 只看該作者
8#
發(fā)表于 2025-3-22 23:23:24 | 只看該作者
Synthesis and Characterization of Wire-Based NbO Memristive Junctions,e voltage flux applied through the?~400?nm thick NbO junction is shown to have a linear relationship to the charge produced within the device. The conductance value . is a function of the total flux history applied. This has implications in emerging neuromorphic semiconductor hardware.
9#
發(fā)表于 2025-3-23 01:44:42 | 只看該作者
10#
發(fā)表于 2025-3-23 08:37:23 | 只看該作者
 關(guān)于派博傳思  派博傳思旗下網(wǎng)站  友情鏈接
派博傳思介紹 公司地理位置 論文服務(wù)流程 影響因子官網(wǎng) 吾愛論文網(wǎng) 大講堂 北京大學(xué) Oxford Uni. Harvard Uni.
發(fā)展歷史沿革 期刊點(diǎn)評(píng) 投稿經(jīng)驗(yàn)總結(jié) SCIENCEGARD IMPACTFACTOR 派博系數(shù) 清華大學(xué) Yale Uni. Stanford Uni.
QQ|Archiver|手機(jī)版|小黑屋| 派博傳思國(guó)際 ( 京公網(wǎng)安備110108008328) GMT+8, 2025-10-12 08:58
Copyright © 2001-2015 派博傳思   京公網(wǎng)安備110108008328 版權(quán)所有 All rights reserved
快速回復(fù) 返回頂部 返回列表
荔浦县| 讷河市| 哈密市| 鄂托克旗| 佛学| 宜春市| 新乐市| 集安市| 南川市| 桐乡市| 从化市| 江安县| 河曲县| 颍上县| 乳源| 溧阳市| 银川市| 平湖市| 普陀区| 洛阳市| 军事| 体育| 龙井市| 四川省| 西丰县| 托克逊县| 通辽市| 航空| 屏边| 文登市| 高唐县| 桐庐县| 孙吴县| 汝阳县| 尤溪县| 五家渠市| 安国市| 响水县| 改则县| 临清市| 壤塘县|