Titlebook: Materials for Information Technology; Devices, Interconnec Ehrenfried Zschech (Dr. rer. nat.),Caroline Whelan Book 2005 Springer-Verlag Lon

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R. Waser on all the aspects of networked control systems, it was a small step to go from the summer school to the book, certainly given the enthusiasm of the lecturers at the school. We felt that a book collecting overviewson the important developmentsand open pr- lems in the eld of networked control system

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S. Privitera,C. Bongiorno,E. Rimini,R. Zoncadevelopments related to networked fuzzy and optimal control..Networked control systems (NCS) confer advantages of cost reduction, system diagnosis and flexibility, minimizing wiring and simplifying the addition and replacement of individual elements; efficient data sharing makes taking globally inte

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Molecular-beam Deposition of High-k Gate Dielectrics for Advanced CMOSe scaling of future nanoelectronic devices. A new high-k dielectric, the pyrochlore La.Hf.O., has been systematically investigated. This material can be prepared on Si(001) in a cube-on-cube epitaxial mode at high temperature around 770°C forming ultimately clean interfaces with the substrate. At lo

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Thin-film Engineering by Atomic-layer Deposition for Ultra-scaled and Novel Devicesonics. Growth temperature, surface preparation and functionalization, and precursor combinations, when properly selected, allow achieving the desired film properties. Improvements in ALD film quality require a deeper knowledge of the growth mechanisms involved, while substrates, precursors, and depo

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Atomic-layer Deposited Barrier and Seed Layers for Interconnectsof chemical reactions at the surface and its excellent step coverage, ALD has drawn considerable attention for this application. A significant amount of processes for transition metal nitrides and metal films have been developed, which are mostly based on thermal or plasma-enhanced ALD. Both of thes

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Surface Engineering Using Self-assembled Monolayers: Model Substrates for Atomic-layer Depositionith macroscopically well-ordered surfaces. With thermal stability extending from 500–600° C, such substrates withstand multiple cycles of ALD at 300°C. Comparis of WC.N. grown on SAMs with methyl-, bromo-, and cyano-terminal groups and alkyl chain lengths ranging from 7 to 17 methylene units shows d

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