Titlebook: Materials Modification by High-fluence Ion Beams; Roger Kelly,M. Fernanda Silva Book 1989 Kluwer Academic Publishers 1989 AES.EELS.Helium-

無(wú)力向前

書目名稱Materials Modification by High-fluence Ion Beams影響因子(影響力)




書目名稱Materials Modification by High-fluence Ion Beams影響因子(影響力)學(xué)科排名




書目名稱Materials Modification by High-fluence Ion Beams網(wǎng)絡(luò)公開度




書目名稱Materials Modification by High-fluence Ion Beams網(wǎng)絡(luò)公開度學(xué)科排名




書目名稱Materials Modification by High-fluence Ion Beams被引頻次




書目名稱Materials Modification by High-fluence Ion Beams被引頻次學(xué)科排名




書目名稱Materials Modification by High-fluence Ion Beams年度引用




書目名稱Materials Modification by High-fluence Ion Beams年度引用學(xué)科排名




書目名稱Materials Modification by High-fluence Ion Beams讀者反饋




書目名稱Materials Modification by High-fluence Ion Beams讀者反饋學(xué)科排名

grandiose

Lice692

Effects of Ar+ Angle-of-Incidence on the Etching of Si with Cl2 and Low-Energy Ar+ Ionsas alone) and ion-influenced etching is observed. In several cases ion bombardment enhances the etch rate, sometimes to a level higher than the sum of the spontaneous etch rate and the pure sputter rate. (However, in other cases ion bombardment causes a rate reduction)..

拋射物

Computer Simulation of Stopping and Sputteringescription of radiation damage in metals /2/. First BCA range calculations followed soon /3/. Since then, simultaneously with the increasing availability of fast and large computers, more than 400 papers on the computer simulation of atomic collisions in solids have been published.

萬(wàn)靈丹

好忠告人

Ion Formation by Very High Energetic Ion Impact on Solidswhen it is irradiated by a 80 MeV I beam (1). On the other hand, an insulator shows a zone of vigorous damage close to the nuclear track (2) - an europium oxide film emits about 800 Eu atoms under bombardment with a 80 MeV Kr beam (3).

Assignment

Historical Overview on the Fundamentals of Sputteringd to fields far away from that in which sputtering phenomena were first studied and developed (e.g. I found an application of sputtering to blood cells, to remove surface layers from red blood cells! [2]).

Cleave

Magnetron Sputtering - Physics and Designwhen reactive or radio frequency (R.F.) sputtering are used, the high rate of coating compared to ordinary diode sputtering, the versatility and adaptability to different shapes and geometries and, last but not the least, the polution-free nature of the technique.

dragon

Computer Simulation of Ion-Beam Mixing of Cobalt on Silicond E. amounts to between 10 and 100 eV [5]. In this case one can expect a maximum recoil mixing efficiency at the depth of maximum energy deposition by the primary ions, i.e. where F. (.) has its maximum [3,5]. There are also many experimental works which assess this suggestion [6,7,8].

blight