| 書目名稱 | Materials Fundamentals of Gate Dielectrics |
| 編輯 | Alexander A. Demkov,Alexandra Navrotsky |
| 視頻video | http://file.papertrans.cn/626/625775/625775.mp4 |
| 概述 | Describes the unique introduction in the electronics industry of materials – mostly transition metal oxides – already well-known in ceramics.The editors have earned their spurs in their fields of scie |
| 圖書封面 |  |
| 描述 | .This book presents materials fundamentals of novel gate dielectrics that are being introduced into semiconductor manufacturing to ensure the continuous scalling of the CMOS devices. This is a very fast evolving field of research so we choose to focus on the basic understanding of the structure, thermodunamics, and electronic properties of these?materials that determine their performance in device applications. Most of these materials are transition metal oxides. Ironically, the d-orbitals responsible for the high dielectric constant cause sever integration difficulties thus intrinsically limiting high-k dielectrics. Though new in the electronics industry many of these materials are wel known in the field of ceramics, and we describe this unique connection. The complexity of the structure-property relations in TM oxides makes the use of the state of the art first-principles calculations necessary. Several chapters give a detailed description of the modern theory of polarization, and heterojunction band discontinuity within the framework of the density functional theory. Experimental methods include oxide melt solution calorimetry and differential scanning calorimetry, Raman scatter |
| 出版日期 | Book 2005 |
| 關鍵詞 | High-K gate dielectrics; Inorganic chemistry; Semiconductors and insulators; Surface and interface phys |
| 版次 | 1 |
| doi | https://doi.org/10.1007/1-4020-3078-9 |
| isbn_softcover | 978-90-481-6786-9 |
| isbn_ebook | 978-1-4020-3078-9 |
| copyright | Springer Science+Business Media B.V. 2005 |
|Archiver|手機版|小黑屋|
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