Titlebook: Materials & Process Integration for MEMS; Francis E. H. Tay Book 2002 Springer Science+Business Media New York 2002 X-ray.alloy.metals.pol

評論性

Silicon Nanomachining by Scanning Probe Lithography and Anisotropic Wet Etching,uctor materials using a Scanning Probe Microscope (SPM). The advantages of the SPM lithography technique are its high resolution and absence of radiation damage in the substrate to be patterned. Scanning Probe Lithography (SPL) is highly dependent on tip bias, tip force, scanning speed and air humid

Gingivitis

A Novel Bulk Micromachining Method in Gallium Arsenide,ased micro-structures using (001) GaAs substrate. For obtaining wet-etching properties with respect to crystallographic orientation, the etch rates and undercut rates of (001) GaAs are measured using various compositions of NH.OH-H.O.-H.O mixed solutions. From these experimental data, a new GaAs mic

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奴才

Spray Coating Technology of Photoresist/Polymer for 3-D Patterning and Interconnect,ection by spray technology has been studied. Specifically, the study was on the OmniSpray coating technology developed by Electronics Vision Group Austria [1,2]. Results of the present investigation confirm the superiority of the technique in comparison with the more conventional spin coating method

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Connotation

Magnetron Sputtered TiNiCu Shape Memory Alloy Thin Film for MEMS Applications,pon heating and cooling. Freestanding TiNiCu thin film showed clearly pronounced “two-way” shape memory effect, which is quite applicable to develop thin film micro-actuators. By depositing TiNi films on the bulk micromachined Si cantilever structures, micro-beams exhibiting good shape-memory effect

名字

Chemically Amplified Resist for Micromachining Using X-Ray Lithography,nce of UVIII could be optimised at the post-bake temperature of 140.C and time of 2 minutes, and x-ray exposure dose of 18 mJ/cm.. The results were confirmed by Scanning Electron Microscopic (SEM) studies on UVIII test structures, which were processed using the optimised condition. Test structure as

PHIL

Silicon Nanomachining by Scanning Probe Lithography and Anisotropic Wet Etching,n SPM tip is around 10 nm. Samples were hydrogen-passivated by dipping in 10% aqueous HF solution for 15 sec to remove surface native oxide before performing SPM local oxidation process. Then, anisotropic wet etching process was followed with a 34 wt.% aqueous KOH solution at 40°C for 45 sec. Utiliz