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Titlebook: Matching Properties of Deep Sub-Micron MOS Transistors; Jeroen A. Croon,Willy Sansen,Herman E. Maes Book 2005 Springer-Verlag US 2005 CMOS

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書目名稱Matching Properties of Deep Sub-Micron MOS Transistors
編輯Jeroen A. Croon,Willy Sansen,Herman E. Maes
視頻videohttp://file.papertrans.cn/626/625619/625619.mp4
概述Aimed at device physicists, characterization engineers, technology designers, circuit designers, or anybody else interested in the stochastic properties of the MOSFET.Includes supplementary material:
叢書名稱The Springer International Series in Engineering and Computer Science
圖書封面Titlebook: Matching Properties of Deep Sub-Micron MOS Transistors;  Jeroen A. Croon,Willy Sansen,Herman E. Maes Book 2005 Springer-Verlag US 2005 CMOS
描述.Matching Properties of Deep Sub-Micron MOS Transistors. examines this interesting phenomenon. Microscopic fluctuations cause stochastic parameter fluctuations that affect the accuracy of the MOSFET. For analog circuits this determines the trade-off between speed, power, accuracy and yield. Furthermore, due to the down-scaling of device dimensions, transistor mismatch has an increasing impact on digital circuits. The matching properties of MOSFETs are studied at several levels of abstraction:..A simple and physics-based model is presented that accurately describes the mismatch in the drain current. The model is illustrated by dimensioning the unit current cell of a current-steering D/A converter...The most commonly used methods to extract the matching properties of a technology are bench-marked with respect to model accuracy, measurement accuracy and speed, and physical contents of the extracted parameters. ..The physical origins of microscopic fluctuations and how they affect MOSFET operation are investigated. This leads to a refinement of the generally applied 1/area law. In addition, the analysis of simple transistor models highlights the physical mechanisms that dominate the fl
出版日期Book 2005
關(guān)鍵詞CMOS; Leistungsfeldeffekttransistor; MOSFET matching; MOSFET modeling; Transistor; device characterizatio
版次1
doihttps://doi.org/10.1007/b105122
isbn_softcover978-1-4419-3718-6
isbn_ebook978-0-387-24313-9Series ISSN 0893-3405
issn_series 0893-3405
copyrightSpringer-Verlag US 2005
The information of publication is updating

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0893-3405 c properties of the MOSFET.Includes supplementary material: .Matching Properties of Deep Sub-Micron MOS Transistors. examines this interesting phenomenon. Microscopic fluctuations cause stochastic parameter fluctuations that affect the accuracy of the MOSFET. For analog circuits this determines the
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