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Titlebook: Mass Transport in Solids; F. Bénière,C. R. A. Catlow Book 1983 Springer Science+Business Media New York 1983 chemistry.diffusion.electroni

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發(fā)表于 2025-3-21 19:31:44 | 只看該作者 |倒序?yàn)g覽 |閱讀模式
書目名稱Mass Transport in Solids
編輯F. Bénière,C. R. A. Catlow
視頻videohttp://file.papertrans.cn/626/625297/625297.mp4
叢書名稱NATO Science Series B:
圖書封面Titlebook: Mass Transport in Solids;  F. Bénière,C. R. A. Catlow Book 1983 Springer Science+Business Media New York 1983 chemistry.diffusion.electroni
描述Atomic transport in solids is a field of growing importance in solid state physics and chemistry, and one which, moreover, has important implications in several areas of materials science. This growth is due first to an increase in the understanding of the fund- amentals of transport processes in solids. Of equal importance, however, have been the improvements in the last decade in the experi- mental techniques available for the investigation of transport phenomena. The advances in technique have stimulated studies of a wider range of materials; and expansion of the field has been strong- ly encouraged by the increasing range of applied areas where transport processes play an essential role. For example, mass transport phenomena play a critical role in the technology of fabrication of components in the electronics industry. Transport processes are involved both during the fabrication and operation of devices and with the growing trend to miniaturisation there are increasing demands on accurate control of diffusion processes. The present book (which is based on a NATO sponsored Advanced Study Institute held in 1981 at Lannion, France) aims to present a general survey of the subject,
出版日期Book 1983
關(guān)鍵詞chemistry; diffusion; electronics; growth; materials science; physics; solid state physics; transport
版次1
doihttps://doi.org/10.1007/978-1-4899-2257-1
isbn_softcover978-1-4899-2259-5
isbn_ebook978-1-4899-2257-1Series ISSN 0258-1221
issn_series 0258-1221
copyrightSpringer Science+Business Media New York 1983
The information of publication is updating

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Computer Experiments on Point Defects and Diffusion,ine calculations for performing accurate tests of classical theories. Eight years later the scheme proposed by Bennett remains valid, although contemporary subjects e.g. surface diffusion, and superionic conduction are added. But in the present article we still follow the description of the methods
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發(fā)表于 2025-3-22 19:52:34 | 只看該作者
Diffusion in a Temperature Gradient, arise from non-uniformity of other properties. The effect we are concerned with in these lectures is diffusion caused by a temperature gradient, which is known as thermotransport — the concept which was introduced in chapters (1) and (3). As a result of this effect, an initially uniform mixture, su
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La Diffusion Dans Les Metaux,les mécanismes mis en jeu. Dans les solides cristallisés, et plus particulièrement dans les métaux, on sait que les a tomes se déplacent par l’intermédiaire de défauts ponctuels. A l’équilibre thermique, les lacunes sont les défauts majoritaires, si bien que le mécanisme prédominant est lacunaire ;
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發(fā)表于 2025-3-23 02:37:40 | 只看該作者
Point Defects and Diffusion in Molecular Solids,as it includes the organic solids, which are virtually infinite in number due to the unique facility of carbon for homopolar and heteropolar covalent bonding. It also exhibits the widest variation in the nature of the basic stuctural unit, ranging from the single atoms of the rare gas solids to the
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發(fā)表于 2025-3-23 07:35:29 | 只看該作者
Diffusion in Semiconductors, to present a comprehensive survey. References (1)(2) and (9) provide detailed accounts, while the general aspects of diffusion theory are dealt with in Chapters (1) (2) and (3) of the present book. We will show that knowledge of the fundamental aspects of diffusion in semiconductors is still very u
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