Titlebook: MOSFET Technologies for Double-Pole Four-Throw Radio-Frequency Switch; Viranjay M. Srivastava,Ghanshyam Singh Book 2014 Springer Internati

時(shí)代錯(cuò)誤

TAP

變化

Design of Double-Pole Four-Throw RF Switch,irements of devices transmitting at ISM band frequencies (900?MHz and above). The low insertion loss, high isolation between ports, low distortion, and low current consumption of these devices make them an excellent solution for several high-frequency applications [3].

過(guò)分

1872-082X ET and HFO2 based MOSFET.Explains the design of RF switches This book provides analysis and discusses the design of various MOSFET technologies which are used for the design of Double-Pole Four-Throw (DP4T) RF switches for next generation communication systems. The authors discuss the design of the

FAR

玩忽職守

Book 2014ll as the Cylindrical Surrounding double-gate (CSDG) MOSFET. The effect of HFO2 (high dielectric material) in the design of DG MOSFET and CSDG MOSFET is also explored. Coverage includes comparison of Single-gate MOSFET and Double-gate MOSFET switching parameters, as well as testing of MOSFETs parameters using image acquisition.

帳單

優(yōu)雅

Longitude

Ji Zhao,Jiaming Liu,Qiang Li,Lingli Tang,Hongbin Zhangrial case studies, they capture the wealth of knowledge that eight companies have gathered during the introduction of the software product line engineering approach in their daily practice. After reading this b978-3-642-09061-5978-3-540-71437-8

finale