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Titlebook: Low-Power High-Speed ADCs for Nanometer CMOS Integration; Zhiheng Cao,Shouli Yan Book 2008 Springer Science+Business Media B.V. 2008 Analo

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發(fā)表于 2025-3-23 10:46:11 | 只看該作者
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發(fā)表于 2025-3-23 23:34:07 | 只看該作者
A 32 mW 1.25 GS/s 6 b 2 b/Step SAR ADC in 130 nm Digital CMOS, standard nanometer digital CMOS processes to achieve 1.25 GS/s, 6-bit performance but with much lower power consumptions and smaller die area than flash ADCs. Unlike many previously published low-power high-speed ADCs such as [14], [13] and [6], this ADC achieves 6-bit accuracy without any complex
15#
發(fā)表于 2025-3-24 04:38:48 | 只看該作者
16#
發(fā)表于 2025-3-24 09:42:43 | 只看該作者
Book 2008flash and SAR enables the lowest power consumption, 6-bit >1GS/s ADC reported to date. This design can be a drop-in replacement for existing flash ADCs since it does require any post-processing or calibration step and has the same latency as flash. ..3) A 0.4ps-rms-jitter (integrated from 3kHz to 30
17#
發(fā)表于 2025-3-24 13:36:08 | 只看該作者
A 52 mW 10 b 210 MS/s Two-Step ADC for Digital IF Receivers in 130 nm CMOS,
18#
發(fā)表于 2025-3-24 17:20:44 | 只看該作者
Low-Power High-Speed ADCs for Nanometer CMOS Integration
19#
發(fā)表于 2025-3-24 20:46:52 | 只看該作者
hin the context of English language classrooms in Hong Kong. The chapter explores how NETs attempted to negotiate the antagonism between different positionings. Implications for attracting and retaining NETs, as well as for future research, are also discussed.
20#
發(fā)表于 2025-3-25 00:30:15 | 只看該作者
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