Titlebook: Low Substrate Temperature Modeling Outlook of Scaled n-MOSFET; Nabil Shovon Ashraf Book 2018 Springer Nature Switzerland AG 2018

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978-3-031-00906-8Springer Nature Switzerland AG 2018

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Introduction,tnessed a plateau at this node where industry and institutional research professionals are hesitant to forecast what future architecture will assume once the feature size of a transistor enters 7 nm and below. In a previous book [1], also written by the current author, it has been brought to the att

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Historical Perspectives of Scaled MOSFET Evolution,loyments such as stress and strain and wafer orientations. At present, all these adapted incentives to device architectures are performed at 300 K as, although evidence is now on hand about additional performance improvements at temperatures around 77 K, the apparent prohibition to alter substrate t

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