Titlebook: Low Dielectric Constant Materials for IC Applications; Paul S. Ho,Jihperng Jim Leu,Wei William Lee Book 2003 Springer-Verlag Berlin Heidel

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978-3-642-63221-1Springer-Verlag Berlin Heidelberg 2003

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https://doi.org/10.1007/978-3-642-55908-2Dielectric Materials; Integrated circuit manufacture; Interconnects; Low dielectric constant; Permittivi

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Overview on Low Dielectric Constant Materials for IC Applications,niques Finally, the development of porous low-k materials is briefly discussed and its challenge is highlighted by recent results obtained on the porosity effect on material properties of porous organosilicate films.

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Metal/Polymer Interfacial Interactions,med by metal evaporation and by MOCVD. The formation and diffusion of Al—F bonds across the metal/polymer interface is addressed. The effects of polymer surface composition on the reactivity of Al and Cu MOCVD precursors are reviewed. The third portion of the chapter discusses the advantages of form

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Diffusion Of Metals In Polymers And During Metal/Polymer Interface Formation,immobilized by aggregation. Diffusion into the polymer increases strongly at low deposition rates, where a large fraction of isolated metal atoms is able to diffuse into the polymer before being trapped by other atoms at or near the surface. The extent of diffusion appears to be determined by the ea

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