Titlebook: Long-Term Reliability of Nanometer VLSI Systems; Modeling, Analysis a Sheldon Tan,Mehdi Tahoori,Saman Kiamehr Book 2019 Springer Nature Swi

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https://doi.org/10.1007/978-3-030-26172-6Reliability in nanometer integrated systems; Bias Temperature Instability for Devices and Circuits; El

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Aging-Aware Standard Cell Library Optimization MethodsWhile the focus of the previous chapters was the modeling of reliability, the focus of the following chapters is to design reliable cells and circuits in order to mitigate the aging effect.

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Aging Guardband Reduction Through Selective Flip-Flop OptimizationModern VLSI circuits are influenced by several sources of process and runtime variabilities, including transistor aging. Therefore, it is necessary to employ techniques to consider and control the gradual degradations and mismatches during design time, e.g., by adding appropriate timing margins (.) and incorporating mitigation techniques.

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978-3-030-26174-0Springer Nature Switzerland AG 2019

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Book 2019 transient stress evolution, in which wires are stressed under time-varying current flows, and the EM recovery effects. Also includes new, parameterized equivalent DC current based EM models to address the recovery and transient effects;.Presents a cross-layer approach to transistor aging modeling,