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Titlebook: Light Scattering in Semiconductor Structures and Superlattices; David J. Lockwood,Jeff F. Young Book 1991 Springer Science+Business Media

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書目名稱Light Scattering in Semiconductor Structures and Superlattices
編輯David J. Lockwood,Jeff F. Young
視頻videohttp://file.papertrans.cn/587/586041/586041.mp4
叢書名稱NATO Science Series B:
圖書封面Titlebook: Light Scattering in Semiconductor Structures and Superlattices;  David J. Lockwood,Jeff F. Young Book 1991 Springer Science+Business Media
描述Just over 25 years ago the first laser-excited Raman spectrum of any crystal was obtained. In November 1964, Hobden and Russell reported the Raman spectrum of GaP and later, in June 1965, Russell published the Si spectrum. Then, in July 1965, the forerunner of a series of meetings on light scattering in solids was held in Paris. Laser Raman spectroscopy of semiconductors was at the forefront in new developments at this meeting. Similar meetings were held in 1968 (New York), 1971 (Paris) and 1975 (Campinas). Since then, and apart from the multidisciplinary biennial International Conference on Raman Spectroscopy there has been no special forum for experts in light scattering spectroscopy of semiconductors to meet and discuss latest developments. Meanwhile, technological advances in semiconductor growth have given rise to a veritable renaissance in the field of semiconductor physics. Light scattering spectroscopy has played a crucial role in the advancement of this field, providing valuable information about the electronic, vibrational and structural properties both of the host materials, and of heterogeneous composite structures. On entering a new decade, one in which technological a
出版日期Book 1991
關鍵詞crystal; electron; material; scattering; semiconductor; semiconductor physics; semiconductors; spectroscopy
版次1
doihttps://doi.org/10.1007/978-1-4899-3695-0
isbn_softcover978-1-4899-3697-4
isbn_ebook978-1-4899-3695-0Series ISSN 0258-1221
issn_series 0258-1221
copyrightSpringer Science+Business Media New York 1991
The information of publication is updating

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Light Scattering in Semiconductor Structures and Superlattices978-1-4899-3695-0Series ISSN 0258-1221
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NATO Science Series B:http://image.papertrans.cn/l/image/586041.jpg
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https://doi.org/10.1007/978-1-4899-3695-0crystal; electron; material; scattering; semiconductor; semiconductor physics; semiconductors; spectroscopy
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Acoustic, Optic and Interface Phonons: Low Symmetry Superlatticesuperlattice divides, through loss of translational symmetry, the volume of the BZ by an integer (mini-Brillouin zone, MBZ), and the number of . ? 0 modes is enhanced by the same factor. Thus the information that can be gained through optical spectroscopies may be greatly increased with respect to th
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Raman Scattering in α-Sn1_xGex Alloysbeen intensively studied during the past thirty years. In particular, light scattering techniques have been used to investigate the compositional dependence of phonon modes. Most of this work has concentrated on the three main Raman active optical vibrations, assigned to “Si-Si”, “Si-Ge”, and “Ge-Ge
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Resonant Raman Scattering in GaAs-AlAs Multiquantum Wells Under Magnetic Fields to obtain information on different aspects of their electronic structure, as well as on their phonon properties. Thus, RRS has been used, among other methods, to investigate the two-dimensional character of excitons in SL’s and MQW s., the degree of localization of electron and hole wave functions.
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